Maker : National Semiconductor
Part No. : LM3189N

  Datasheet PDF : LM3189N.pdf
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Product Information

LM3189 FM IF System April 1987 LM3189 FM IF System General Description The LM3189N is a monolithic integrated circuit that provides all the functions of a comprehensive FM IF system The block diagram of the LM3189N includes a three stage FM IF amplifier limiter configuration with level detectors for each stage a doubly balanced quadrature FM detector and an audio amplifier that features the optional use of a muting (squelch) circuit The advanced circuit design of the IF system includes desirable deluxe features such as programmable delayed AGC for the RF tuner an AFC drive circuit and an output signal to drive a tuning meter and or provide stereo switching logic In addition internal power supply regulators maintain a nearly constant current drain over the voltage supply range of a 8 5V to a 16V The LM3189N is ideal for high fidelity operation Distortion in an LM3189N FM IF system is primarily a function of the phase linearity characteristic of the outboard detector coil The LM3189N has all the features of the LM3089N plus additions The LM3189N utilizes the 16-lead dual-in-line plastic package and can operate over the ambient temperature range of b 40 C to a 85 C Features Y Y Y Y Y Y Y Y Y Y Y Y Exceptional limiting sensitivity 12 mV typ at b3 dB point Low distortion 0 1% typ (with double-tuned coil) Single-coil tuning capability Improved (S a N) N ratio Externally programmable recovered audio level Provides specific signal for control of inter-channel muting (squelch) Provides specific signal for direct drive of a tuning meter On channel step for search control Provides programmable AGC voltage for RF amplifier Provides a specific circuit for flexible audio output Internal supply voltage regulators Externally programmable ON channel step width and deviation at which muting occurs Block Diagram TL H 7960 – 1 All resistance values are in X L tunes with 100 pF (C) at 10 7 MHz Q0 j 75 (Toko No KACS K586HM or equivalent) C1995 National Semiconductor Corporation TL H 7960 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage Between Pin 11 and Pins 4 14 DC Current Out of Pin 12 DC Current Out of Pin 13 DC Current Out of Pin 15 16V 5 mA 5 mA 2 mA V a e 12V Conditions (See Single-Tuned Test Circuit) Min Typ Max Units Power Dissipation (Note 2) Operating Temperature Range Storage Temperature Range Lead Temperature (Soldering 10 sec ) 1500 mW b 40 C to a 85 C b 65 C to a 150 C 260 C Electrical Characteristics TA e 25 C Symbol Parameter STATIC (DC) CHARACTERISTICS I11 V1 V2 V3 V15 V10 VI(lim) AMR VO(AF) THD Quiescent Circuit Current DC Voltages Terminal 1 (IF Input) Terminal 2 (AC Return to Input) Terminal 3 (DC Bias to Input) Terminal 15 (RF AGC) Terminal 10 (DC Reference) Input Limiting Voltage (b3 dB Point) AM Rejection (Term 6) Recovered AF Voltage (Term 6) Total Harmonic Distortion (Note 1) Single Tuned (Term 6) Double Tuned (Term 6) Signal Plus Noise to Noise Ratio (Term 6) Deviation Mute Frequency RF AGC Threshold On Channel Step 20 12 12 12 75 5 31 20 20 20 95 5 75 12 44 24 24 24 11 6 25 650 1 mA V V V V V mV dB mV % % dB kHz V V No Signal Input Non Muted DYNAMIC CHARACTERISTICS VIN e 0 1V AM Mod e 30% fo e 10 7 MHz fmod e 400 Hz Deviation g 75 kHz 45 325 55 500 05 01 SaN N fDEV V16 V12 VIN e 0 1V 65 fmod e 0 VIN e 0 1V fDEV k g 40 kHz fDEV l g 40 kHz 80 g 40 1 25 0 56 Note 1 THD characteristics are essentially a function of the phase characteristics of the network connected between terminals 8 9 and 10 Note 2 For operation in ambient temperatures above 25 C the device must be derated based on a 150 C maximum junction temperature and a thermal resistance of 80 C W junction to ambient Connection Diagram Dual-In-Line Package TL H 7960 – 2 Top View Order Number LM3189N See NS Package Number N16E 2 Test Circuits Test Circuit for...

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