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5.0V Reference DiodeMaker : National Semiconductor
Shortcut : LM336M-5.0 |
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Product Information |
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LM136-5.0/LM236-5.0/LM336-5.0 5.0V Reference Diode June 1999 LM136-5.0/LM236-5.0/LM336-5.0 5.0V Reference Diode General Description The LM136-5.0/LM236-5.0/LM336-5.0 integrated circuits are precision 5.0V shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient 5.0V zener with 0.6Ω dynamic impedance. A third terminal on the LM136-5.0 allows the reference voltage and temperature coefficient to be trimmed easily. The LM136-5.0 series is useful as a precision 5.0V low voltage reference for digital voltmeters, power supplies or op amp circuitry. The 5.0V makes it convenient to obtain a stable reference from low voltage supplies. Further, since the LM136-5.0 operates as a shunt regulator, it can be used as either a positive or negative voltage reference. The LM136-5.0 is rated for operation over −55˚C to +125˚C while the LM236-5.0 is rated over a −25˚C to +85˚C temperature range. The LM336-5.0 is rated for operation over a 0˚C to +70˚C temperature range. See the connection diagrams for available packages. For applications requiring 2.5V see LM136-2.5. Features n n n n n n n n n Adjustable 4V to 6V Low temperature coefficient Wide operating current of 600 µA to 10 mA 0.6Ω dynamic impedance ± 1% initial tolerance available Guaranteed temperature stability Easily trimmed for minimum temperature drift Fast turn-on Three lead transistor package Connection Diagrams TO-92 Plastic Package DS005716-4 Bottom View Order Number LM236AZ-5.0, LM336Z-5.0 or LM336BZ-5.0 See NS Package Number Z03A TO-46 Metal Can Package DS005716-5 Bottom View Order Number LM136H-5.0, LM136H-5.0/883, LM236H-5.0, LM136AH-5.0, LM136AH-5.0/883, or LM236AH-5.0 See NS Package Number H03H © 1999 National Semiconductor Corporation DS005716 www.national.com Connection Diagrams (Continued) SO Package DS005716-7 Order Number LM336M-5.0 or LM336BM-5.0 See NS Package Number M08A Typical Applications 5.0V Reference 5.0V Reference with Minimum Temperature Coefficient Trimmed 4V to 6V Reference with Temperature Coefficient Independent of Breakdown Voltage DS005716-1 DS005716-3 * Does not affect temperature coefficient DS005716-15 † Adjust to 5.00V * Any silicon signal diode www.national.com 2 Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Reverse Current Forward Current Storage Temperature Operating Temperature Range (Note 2) LM136-5.0 LM236-5.0 15mA 10mA −60˚C to +150˚C −55˚C to +150˚C −25˚C to +85˚C LM336-5.0 0˚C to +70˚C Soldering Information TO-92 Package (10 sec.) 260˚C TO-46 Package (10 sec.) 300˚C SO Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” (appendix D) for other methods of soldering surface mount devices. Electrical Characteristics (Note 3) LM136A-5.0/LM236A-5.0 Parameter Reverse Breakdown Voltage Conditions TA = 25˚C, IR = 1 mA LM136-5.0/LM236-5.0/LM336-5.0 Reverse Breakdown Change With Current Reverse Dynamic Impedance Temperature Stability (Note 4) LM136A-5.0/LM236A-5.0, LM336B-5.0 TA = 25˚C, 600 µA≤IR≤10 mA TA = 25˚C, IR = 1 mA, f = 100 Hz VR Adjusted 5.00V IR = 1 mA, (Figure 2) 0˚C≤TA≤70˚C (LM336-5.0) −25˚C≤TA≤+85˚C (LM236-5.0) −55˚C≤TA≤+125˚C (LM136-5.0) Reverse Breakdown Change With Current Adjustment Range Reverse Dynamic Impedance Long Term Stability Circuit of Figure 1 IR = 1 mA TA = 25˚C ± 0.1˚C, IR = 1 mA, t = 1000 hrs 600 µA≤IR≤10 mA 7 20 6 18 36 17 6 24 4 12 mV mV mV mV V 2.5 Ω ppm 4.9 4.95 5.00 5.00 6 0.6 5.1 5.05 12 1.2 4.8 4.90 5.00 5.00 6 0.6 5.2 5.1 20 2 V V mV Ω LM136-5.0/LM236-5.0 Min Typ Max LM336B-5.0 LM336-5.0 Min Typ Max Units ±1 0.8 20 1.6 ±1 0.8 20 Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electr... |
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