Maker : Toshiba Semiconductor
Part No. : M10LZ47

  Datasheet PDF : M10LZ47.pdf
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Product Information

SM10LZ47 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM10LZ47 AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 800V l R.M.S. On−State Current l High Commutation (dv / dt) l Isolation Voltage www.DataSheet4U.com : IT (RMS) = 10A : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage R.M.S On−State Current (Full Sine Waveform) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 2 SYMBOL VDRM IT (RMS) ITSM It di / dt PGM PG (AV) VFGM IGM Tj Tstg VISOL 2 RATING 800 10 100 (50Hz) 110 (60Hz) 50 50 5 0.5 10 2 −40~125 −40~125 1500 UNIT V A A As A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 15A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 1 2001-07-10 SM10LZ47 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage www.DataSheet4U.com Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Commutation VTM VGD IH Rth (j−c) dv / dt (dv / dt) c ITM = 15A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = 600V, Tj = 125°C Exponential Rise VDRM = 400V, Tj = 125°C (di / dt) c = − 5.5A / ms IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) T2 (+) , Gate (+) T2 (+) , Gate (−) T2 (−) , Gate (−) MIN ― ― ― ― ― ― ― ― 0.2 ― ― ― 10 TYP. ― ― ― ― ― ― ― ― ― ― ― 300 ― MAX 20 1.5 1.5 1.5 30 30 30 1.5 ― 50 3.4 ― ― V V mA °C / W V / µs V / µs mA V UNIT µA MARKING NUMBER *1 *2 SYMBOL TOSHIBA PRODUCT MARK TYPE SM10LZ47 M10LZ47 MARK *3 Example 8A: January 1998 8B: February 1998 8L: December 1998 2 2001-07-10 SM10LZ47 www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed...

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