Maker : Philips Semiconductors
Part No. : M1102

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTM1102 PNP transistor/Schottky-diode module Product specification File under Discrete Semiconductors, SC01 1996 May 09 Philips Semiconductors Product specification PNP transistor/Schottky-diode module FEATURES • Low output capacitance • Fast switching time • Integrated Schottky protection diode. handbook, halfpage PZTM1102 DESCRIPTION Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. 4 1 APPLICATIONS • High-speed switching for industrial applications. 2 4 PINNING PIN 1 2 3 4 base emitter collector, anode Schottky DESCRIPTION cathode Schottky Marking code: TM1102. 1 Top view 2 3 MAM237 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PNP transistor VCBO VCES VEBO IC VR IF IF(AV) P Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter VBE = 0 open collector − − − − − − − up to Tamb = 25 °C; note 1 reverse current applied forward current applied Combined device Ptot Tamb Tstg Tj Notes 1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W. 2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only. total power dissipation operating ambient temperature storage temperature junction temperature up to Tamb = 25 °C; note 2 − −55 −55 − 1.2 +150 +150 150 W °C °C °C − − − −40 −40 −6 −200 V V V mA PARAMETER CONDITIONS MIN. MAX. UNIT Schottky barrier diode continuous reverse voltage forward current (DC) average forward current power dissipation junction temperature 40 1 1 0.5 125 150 V A A W °C °C 1996 May 09 2 Philips Semiconductors Product specification PNP transistor/Schottky-diode module ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL NPN transistor V(BR)CBO V(BR)CES V(BR)EBO ICES IEBO VCEsat collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter cut-off current open emitter; IC = −10 µA; IE = 0; Tamb = −55 to +150 °C; note 1 open base; IC = −1 mA; VBE = 0; Tamb = −55 to +150 °C; note 1 open collector; IE = −10 µA; IC = 0; Tamb = −55 to +150 °C; note 1 VCE = −20 V; VBE = 0 −40 −40 −6 − − − − − − − − − − − − − 250 40 70 100 30 60 15 PARAMETER CONDITIONS MIN. PZTM1102 MAX. − − − 100 50 50 10 −200 −300 −250 −350 −850 −950 −1.0 −1.1 4.5 10 − − − 300 − 500 − 7 23 380 80 UNIT V V V nA µA nA µA mV mV mV mV mV mV V V pF pF MHz VCE = −20 V; VBE = 0; Tamb = −55 to +150 °C − VEB = −6 V; IC = 0; Tamb = −55 to +150 °C emitter-base cut-off current VEB = −6 V; IC = 0 collector-emitter saturation voltage note 1 IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −3.2 mA Tamb = −55 to +150 °C; note 1 IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −3.2 mA note 1 IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −5 mA Tamb = −55 to +150 °C; note 1 IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −5 mA IE = ie = 0; VCB = −5 V; f = 1 MHz IC = ic = 0; VEB = −0.5 V; f = 1 MHz IC = −10 mA; VCE = −20 V; f = 100 MHz VCE = −1 V; note 1 IC = −0.1 mA IC = −1 mA IC = −10 mA IC = −100 mA VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage VBEsat base-emitter saturation voltage Cob Cib fT hFE output capacitance input capacitance transition frequency DC current gain hFE DC current gain VCE = −1 V; Tamb = −55 to +150 °C; note 1 IC = −10 mA IC = −100 mA SWITCHING TIMES (see Figs 2 and 3) td tr ts tf delay time rise time storage time fall time 3 VCC = 5 V IC = 50 mA Vi = 0 to 5 V 3 13 200 50 ns ns ns ns 1996 May 09 Philips Semiconductors Product specification PNP transist...

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