Maker : Calogic LLC
Part No. : M116

  Datasheet PDF : M116.pdf
  Cross Reference : M116 Cross Reference
  Buy Component : M116 Find Stock and Price

Shortcut : M1102  M1105  M1106  M1107  M1108  M112  M1141  M1150  M1150  M116  M1170-1  M1173  M11B16161A  M11B16161SA  M11B1644A  M11B1644SA  M11B416256A  M11B416256A-25J  M11B416256A-25T  M11B416256A-28J  M11B416256A-28T  M11B416256A-30J  M11B416256A-30T  M11B416256A-35J  M11B416256A-35T  M11B416256A-40J  M11B416256A-40T  M11L16161A  M11L16161SA  M11L1644A  M11L1644SA  M11L416256SA 

Product Information

CORPORATION Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier M116 FEATURES • Low IGSS • Integrated Zener Clamp for Gate Protection PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.1mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +125oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TO-72 C S G D 1003Z ORDERING INFORMATION Part DEVICE SCHEMATIC 1 Package Hermetic TO-72 Sorted Chips in Carriers Temperature Range -55oC to +125oC -55oC to +125oC M116 XM116 2 3 4 0330 ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) SYMBOL rDS(on) VGS(th) BVDSS BVSDS BVGBS ID(OFF) IS(OFF) IGSS Cgs Cgd Cdb Ciss PARAMETER Drain Source ON Resistance Gate Threshold Voltage Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Gate-Body Breakdown Voltage Drain Cuttoff Current Source Cutoff Current Gate-Body Leakage Gate-Source (Note 1) Gate-Drain Capacitance (Note 1) Drain-Body Capacitance (Note 1) Input Capacitance (Note 1) 1 30 30 30 60 10 10 100 2.5 2.5 7 10 pF nA pA MIN MAX 100 200 5 V UNITS Ω TEST CONDITIONS VGS = 20V, ID = 100µA VGS = 10V, ID = 100µA VGS = VDS, ID = 10µA ID = 1µA, VGS = 0 IS = 1µA, VGD = VBD = 0 IG = 10µA, VSB = VDB = 0 VDS = 20V, VGS = 0 VSD = 20V, VGD = VBD = 0 VGS = 20V, VDS = 0 VGB = VDB = VSB = 0, f = 1MHz Body Guarded VGB = 0, VDB = 10V, f = 1MHz VGB = 0, VDB = 10V, VBS = 0, f = 1MHz NOTE 1: For design reference only, not 100% tested. ...

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