Maker : EliteMT
Part No. : M11L1644A

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Shortcut : M11L1644A  M11L1644SA 

Product Information

$% DRAM FEATURES X4 organization EDO (Extended Data-Out) access mode Single power supply : 5V ± 10% Vcc for 5V product 3.3V ± 10% Vcc for 3.3V product y Interface for inputs and outputs www.DataSheet4U.com TTL-compatible for 5V products LVTTL-compatible for 3.3V products y 2048-cycle refresh in 32ms y Refresh modes : RAS only, CAS BEFORE RAS (CBR) and HIDDEN capabilities, y Optional self-Refresh capabilities(S-ver. Only) y JEDEC standard pinout y Key AC Parameter -45 -50 -60 tRAC 45 50 60 tCAC 11 13 15 tRC 77 84 104 tPC 16 20 25 y y y M11B1644A / M11B1644SA M11L1644A / M11L1644SA 4M x 4 DRAM EDO PAGE MODE ORDERING INFORMATION - PACKAGE 24 / 26-pin 300mil SOJ 24 / 26-pin 300mil TSOP (TypeII) PRODUCT NO. M11B1644A-45J/50J/60J M11B1644SA-45J/50J/60J M11L1644A-45J/50J/60J M11L1644SA-45J/50J/60J M11B1644A-45T/50T/60T M11B1644SA-45T/50T/60T M11L1644A-45T/50T/60T M11L1644SA-45T/50T/60T * Ordered by special request Refresh Vcc Normal *SelfRefresh Normal SelfRefresh Normal *SelfRefresh Normal SelfRefresh 3.3V 5V TSOPII 3.3V 5V SOJ PACKING TYPE GENERAL DESCRIPTION The M11B1644/M11L1644 series is a randomly accessed solid state memory, organized as 4,194,304 x 4 bits device. It offers Extended Data-Output access mode. Single power supply (5V ± 10%, 3.3V ± 10%), access time (-45,-50,-60), selfrefresh function and package type (SOJ, TSOP II) are optional features of this family. All these family have CAS - before RAS , RAS -only refresh and Hidden refresh. The primary advantage of EDO is the availability of data-out even after CAS returns high. EDO allows CAS precharge time (tPC) to occur without the output data going invalid. This elimination of CAS output control allows pipeline Read. PIN ASSIGNMENT SOJ Top View V CC I/ O0 I/ O1 WE R AS NC A10 A0 A1 A2 A3 V CC TSOP (TypeII) Top View VS S I /O 3 I /O 2 C AS OE A9 A8 A7 A6 A5 A4 VS S VCC I/O 0 I/O 1 WE RA S NC A10 A0 A1 A2 A3 VC C 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VSS I/ O3 I/ O2 CA S OE A9 A8 A7 A6 A5 A4 VSS Elite Semiconductor Memory Technology Inc. Publication Date : May. 2001 Revision : 1.1 1/16 $% FUNCTIONAL BLOCK DIAGRAM WE RAS CAS CONTROL LOGIC M11B1644A / M11B1644SA M11L1644A / M11L1644SA DATA-IN BUFFER 4 IO0 : IO3 CLOCK GENERATOR www.DataSheet4U.com A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 11 ROW. ADDRESS BUFFERS(11) 11 11 ROW DECODER 2048 x 2048 x 4 MEMORY ARRAY REFRESH COUNTER 2048 x 4 REFRESH CONTROLER 11 COLUMN ADDRESS BUFFER 11 COLUMN DECODER 2048 4 DATA-OUT BUFFER OE 4 SENSE AMPLIFIERS I/O GATING 8 2048 VBB GENERATOR VCC VSS PIN DESCRIPTIONS PIN NO. 8~11,14~19,7 5 21 4 20 2,3,22,23 1,12 13,24 6 PIN NAME A0~A10 RAS CAS WE OE TYPE Input Input Input Input Input Input / Output Supply Ground - DESCRIPTION Address Input Row Address : A0~A10 Column Address : A0~A10 Row Address Strobe Column Address Strobe Write Enable Output Enable Data Input / Output Power, (5V or 3.3V) Ground No Connect I/O0 ~ I/O3 VCC VSS NC Elite Semiconductor Memory Technology Inc. Publication Date : May. 2001 Revision : 1.1 2/16 $% ABSOLUTE MAXIMUM RATINGS Voltage on Any pin Relative to Vss 5V Product … ……-1V to +7V 3.3V Product … ……-0.5V to +4.6V Operating Temperature, TA (ambient) ….0 °C to +70 °C Storage Temperature (plastic) ……….-55 °C to +150 °C Power Dissipation …………………………………1.0W Short Circuit Output Current ……………………50mA www.DataSheet4U.com M11B1644A / M11B1644SA M11L1644A / M11L1644SA Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded. This is a stress rating only, and functional operation of the device above those conditions indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (0 °C ≤ TA ≤ 70 °C...

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