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Part No. : M11L416256SA

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www.DataSheet4U.com EliteMT DRAM M11L416256SA 256 K x 16 DRAM EDO PAGE MODE FEATURES X16 organization EDO (Extended Data-Output) access mode 2 CAS Byte/Word Read/Write operation Single 3.3V ( ± 10%) power supply LVTTL-compatible inputs and outputs 512-cycle refresh in 8ms Refresh modes : RAS only, CAS BEFORE RAS (CBR) and HIDDEN capabilities Self-refresh capability JEDEC standard pinout Key AC Parameter tRAC -35 35 tCAC 10 tRC 65 tPC 14 ORDERING INFORMATION - PACKAGE 40-pin 400mil SOJ 44 / 40-pin 400mil TSOP (Type II) PRODUCT NO. PACKING TYPE COMMENTS M11L416256SASOJ/TSOPII 35 TG M11L416256SA35 JP Pb-free GENERAL DESCRIPTION The M11L416256 series is a randomly accessed solid state memory, organized as 262,144 x 16 bits device. It offers Extended Data-Output , 3.3V( ± 10%) single power supply. Access time (-35) , self-refresh and package type (SOJ, TSOP II) are optional features of this family. All these family have CAS - before - RAS , RAS -only refresh and Hidden refresh capabilities. Two access modes are supported by this device: Byte access and Word access. Use only one of the two CAS and leave the other staying high will result in a BYTE access. WORD access happens when two CAS ( CASL , CASH ) are used. CASL transiting low during READ or WRITE cycle will output or input data into the lower byte (IO0~IO7), and CASH transiting low will output or input data into the upper byte (IO8~15). PIN ASSIGNMENT SOJ Top View VCC I/O0 I/O1 I/O2 I/O3 VC C I/O4 I/O5 I/O6 I/O7 NC NC WE RA S NC A0 A1 A2 A3 VC C TSOP (TypeII) Top View VS S I/O1 5 I/O1 4 I/O1 3 I/O1 2 VS S I/O1 1 I/O1 0 I/O9 I/O8 NC CASL CASH OE A8 A7 A6 A5 A4 VS S VCC I/O0 I/O1 I/O2 I/O3 VC C I/O4 I/O5 I/O6 I/O7 NC NC WE RA S NC A0 A1 A2 A3 VC C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 VS S I/O1 5 I/O1 4 I/O1 3 I/O1 2 VS S I/O1 1 I/O1 0 I/O 9 I/O 8 NC CASL CASH OE A8 A7 A6 A5 A4 VS S Elite Memory Technology Inc Publication Date: Aug. 2005 Revision : 1.4 1/16 www.DataSheet4U.com EliteMT FUNCTIONAL BLOCK DIAGRAM M11L416256SA WE RAS CASL CASH CONTROL LOGIC DATA-IN BUFFER 16 IO0 : IO15 CLOCK GENERATOR DATA-OUT BUFFER 9 COLUMN DECODER 512 16 OE 16 9 A0 A1 A2 A3 COLUMN ADDRESS BUFFER REFRESH CONTROLER SENSE AMPLIFIERS I/O GATING 8 512 x 16 A4 A5 A6 A7 A8 9 99 ROW. ADDRESS BUFFERS(9) 9 ROW DECODER 512 x 512 x 16 MEMORY ARRAY REFRESH COUNTER 512 VBB GENERATOR VCC VSS PIN DESCRIPTIONS PIN NO. 16~19,22~26 14 28 29 13 PIN NAME A0~A8 RAS CASH CASL TYPE Input Input Input Input DESCRIPTION Address Input Row Address : A0~A8 Column Address : A0~A8 Row Address Strobe Column Address Strobe / Upper Byte Control Column Address Strobe / Lower Byte Control WE OE Input Input Input / Output Supply Ground - Write Enable Output Enable Data Input / Output Power, 3.3V Ground No Connect 27 2~5,7~10,31~34,36~39 1,6,20 21,35,40 11,12,15,30 I/O0 ~ I/O15 VCC VSS NC Elite Memory Technology Inc Publication Date: Aug. 2005 Revision : 1.4 2/16 www.DataSheet4U.com EliteMT ABSOLUTE MAXIMUM RATINGS Voltage on Any pin Relative to Vss … ……-0.5V to +4.6V Operating Temperature, TA (ambient) ….0 °C to +70 °C Storage Temperature (plastic) ……….-55 °C to +150 °C Power Dissipation …………………………………0.8W Short Circuit Output Current ……………………50mA M11L416256SA Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded. This is a stress rating only, and functional operation of the device above those conditions indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (0 °C ≤ TA ≤ 70 °C ; VCC = 3.3V ± 10% unless otherwise noted) PARAMETER CONDI...

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