Maker : ON Semiconductor
Part No. : MBR360

Datasheet PDF : MBR360.pdf
Cross Reference : MBR360 Cross Reference
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Shortcut : MBR360  MBR360  MBR360  MBR360  MBR360  MBR360T3  MBR360TR 

Product Information

www.DataSheet4U.com MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features http://onsemi.com • • • • • Extremely Low vF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction Pb−Free Packages are Available* SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 50, 60 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Polarity: Cathode indicated by Polarity Band MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR IO IFSM Max Unit V 50 60 3.0 80 A A A MBR 3x0G G AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 MARKING DIAGRAM MBR350 MBR360 Average Rectified Forward Current TA = 65°C (RqJA = 28°C/W, P.C. Board Mounting) Non−Repetitive Peak Surge Current (Note 1) (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75°C) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) TJ, Tstg −65 to +150 °C A x G (Note: = Assembly Location = 5 or 6 = Pb−Free Package Microdot may be in either location) THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient (see Note 4 − Mounting Data, Mounting Method 3) RqJA 28 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Lead Temperature reference is cathode lead 1/32 in from case. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 June, 2006 − Rev. 6 Publication Order Number: MBR350/D MBR350, MBR360 ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 2) Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) Maximum Instantaneous Reverse Current @ Rated DC Voltage (Note 3) TL = 25°C TL = 100°C 2. Lead Temperature reference is cathode lead 1/32 in from case. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Symbol vF 0.600 0.740 1.080 iR 0.60 20 mA Max Unit V 20 I , REVERSE CURRENT (mA) R TJ = 100°C 10 7.0 5.0 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 3.0 2.0 75°C 25°C 20 10 5.0 2.0 1.0 0.50 0.20 0.10 0.05 0.02 0.01 0.005 0.002 0 10 TJ = 150°C 100°C 75°C *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 25°C 20 30 40 50 VR REVERSE VOLTAGE (VOLTS) 60 80 1.0 0.7 0.5 , AVERAGE FORWARD CURRENT (AMPS) 5.0 0.3 0.2 Figure 2. Typical Reverse Current* 4.0 RATED VR RqJA = 28°C/W DC 0.1 0.07 0.05 0.03 0.02 0 0.2 0.6 0.8 0.4 1.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 1.2 1.4 3.0 SQUARE WAVE 2.0 1.0 F (AV) TJ = 150°C 0 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (C°) 140 160 I Figure 1. Typical Forward Voltage Figure 3. Current Der...

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