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Part No. : MDE6IC9120NR1

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Freescale Semiconductor Technical Data Document Number: MDE6IC9120N Rev. 0, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC9120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 90 mA, IDQ2A = 550 mA, VG2B = 1.6 Vdc, Pout = 25 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 32.5 32.0 31.3 PAE (%) 38.4 38.0 37.7 Output PAR (dB) 6.6 6.7 7.0 ACPR (dBc) - 39.0 - 40.4 - 39.6 MDE6IC9120NR1 MDE6IC9120GNR1 920 - 960 MHz, 25 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 120 Watts CW Pout • Typical Pout @ 1 dB Compression Point ] 120 Watts CW Features • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel www.DataSheet4U.com VGS1A RFinA CARRIER (2) RFout1/VDS2A VGS1A GND RFinA GND GND VGS2A VDS1A VDS1B VGS2B GND GND RFinB GND VGS1B CASE 1866 - 02 TO - 270 WBL - 16 PLASTIC MDE6IC9120NR1 CASE 1867 - 02 TO - 270 WBL - 16 GULL PLASTIC MDE6IC9120GNR1 VGS2A VDS1A VDS1B VGS2B RFinB VGS1B Quiescent Current Temperature Compensation (1) PEAKING (2) RFout2/VDS2B 1 2 3 4 5 6 7 8 9 10 11 12 13 14 16 RFout1/VDS2A 15 RFout2/VDS2B (Top View) Quiescent Current Temperature Compensation (1) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. 2. Peaking and Carrier orientation is determined by the test fixture design. © Freescale Semiconductor, Inc., 2009. All rights reserved. MDE6IC9120NR1 MDE6IC9120GNR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDSS VGS VDD Tstg TC TJ Pin Value - 0.5, +66 - 0.5, +10 32, +0 - 65 to +150 150 225 30 Unit Vdc Vdc Vdc °C °C °C dBm Table 2. Thermal Characteristics Characteristic Final Doherty Application Thermal Resistance, Junction to Case Case Temperature 80°C, Pout = 30 W CW Stage 1A, 27 Vdc, IDQ1A = 90 mA Stage 1B, 27 Vdc, IDQ1B = 90 mA Stage 2A, 27 Vdc, IDQ2A = 550 mA Stage 2B, 27 Vdc, VG2B = 2.5 Vdc RθJC 6.0 4.9 1.3 0.95 °C/W Symbol Value (2,3) Unit Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf....

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