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Part No. : MJB45H11

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www.DataSheet4U.com MJB44H11 (NPN), MJB45H11 (PNP) Preferred Devices Complementary Power Transistors D2PAK for Surface Mount http://onsemi.com . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. • Low Collector−Emitter Saturation Voltage − • • • • VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 94, V−O @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V SILICON POWER TRANSISTORS 10 AMPERES 80 VOLTS 50 WATTS MARKING DIAGRAM MAXIMUM RATINGS Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VEB IC PD 50 1.67 PD 2.0 0.016 TJ, Tstg −55 to 150 Watts W/°C °C Watts W/°C Value 80 5 10 20 Unit Vdc Vdc Adc D2PAK CASE 418B STYLE 1 Y WW B4xH11 x = Year = Work Week = Specific Device Code = 4 or 5 B4xH11 YWW ORDERING INFORMATION Device MJB44H11 Package D2PAK D2PAK D2PAK D2PAK Shipping† 50 Units/Rail 800/Tape & Reel 50 Units/Rail 800/Tape & Reel ww w.D ata Sh eet 4U .co m THERMAL CHARACTERISTICS Characteristic Symbol RθJC RθJA Max 2.5 75 Unit °C/W °C/W MJB44H11T4 MJB45H11 MJB45H11T4 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 1 December, 2003 − Rev. 1 Publication Order Number: MJB44H11/D www.DataSheet4U.com MJB44H11 (NPN), MJB45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) Emitter Cutoff Current (VEB = 5 Vdc) ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) td + tr MJB44H11 MJB45H11 ts MJB44H11 MJB45H11 tf MJB44H11 MJB45H11 − − 140 100 − − − − 500 500 − − ns − − 300 135 − − ns ns Ccb MJB44H11 MJB45H11 fT MJB44H11 MJB45H11 − − 50 40 − − − − 130 230 − − MHz pF VCE(sat) VBE(sat) hFE − − 60 40 − − − − 1.0 1.5 − − Vdc Vdc − VCEO(sus) ICES IEBO 80 − − − − − − 10 50 Vdc µA µA Symbol Min Typ Max Unit w.D a taS hee t 4U .co m ww http://onsemi.com 2 www.DataSheet4U.com MJB44H11 (NPN), MJB45H11 (PNP) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 20 50 D = 0.5 0.2 0.1 0.05 0.02 ZθJC(t) = r(t) RθJC RθJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZθJC(t) P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 1. Thermal Response 100 IC, COLLECTOR CURRENT (AMPS) 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0 5.0 7.0 10 2.0 3.0 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 ms 100 µs 10 µs TC ≤ 70° C DUTY CYCLE ≤ 50% dc 1.0 µs There are two limitations on the power handling ability of a transistor: average junction temperatur...

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