Maker : Motorola
Part No. : MMBT404ALT1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT404ALT1/D Chopper Transistor PNP Silicon COLLECTOR 3 1 BASE MMBT404ALT1 Motorola Preferred Device 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –35 –40 –25 –150 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBT404ALT1 = 2N THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,** TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature * FR–5 = 1.0 x 0.75 x 0.062 in. ** Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = –10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) Emitter Cutoff Current (VEB = –10 Vdc, IC = 0) Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –35 –40 –25 — — — — — — — — — — –100 –100 Vdc Vdc Vdc nAdc nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBT404ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = –12 mAdc, VCE = –0.15 Vdc) Collector–Emitter Saturation Voltage (IC = –12 mAdc, IB = –0.4 mAdc) (IC = –24 mAdc, IB = –1.0 mAdc) Base–Emitter Saturation Voltage (IC = –12 mAdc, IB = –0.4 mAdc) (IC = –24 mAdc, IB = –1.0 mAdc) hFE VCE(sat) — — VBE(sat) — — — — –0.85 –1.0 — — –0.15 –0.2 Vdc 100 — 400 — Vdc SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — — 20 pF SWITCHING CHARACTERISTICS Delay time (VCC = –10 Vdc, IC = –10 mAdc) (Figure 1) Rise Time (IB1 = –1.0 mAdc, VBE(off) = –14 Vdc) Storage Time (VCC = –10 Vdc, IC = –10 mAdc) Fall Time (IB1 = IB2 = –1.0 mAdc) (Figure 1) td tr ts tf — — — — 43 180 675 160 — — — — ns ns ns ns VBB RBB 1.0 k 0.1 µF Vin 51 RB 10 k VCC = –10 V 1.0 k TO SCOPE Vin (Volts) ton, td, tr toff, ts and tf –12 +20.6 VBB (Volts) +1.4 –11.6 Voltages and resistor values shown are for IC = 10 mA, IC/IB = 10 and IB1 = IB2 Figure 1. Switching Time Test Circuit 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT404ALT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using ...

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