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Part No. : MMBT4124LT1G

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www.DataSheet4U.com MMBT4124LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 25 30 5.0 200 Unit Vdc Vdc Vdc mAdc 3 Symbol PD Max 225 1.8 556 300 2.4 417 −55 to +150 Unit W mW/°C °C/W W mW/°C °C/W °C 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA PD RqJA TJ, Tstg MARKING DIAGRAM ZC M G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ZC = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT4124L T1G Package SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 2 1 Publication Order Number: MMBT4124LT1/D MMBT4124LT1G www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IE = 0) Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector−Emitter Saturation Voltage (Note 3) (IC = 50 mAdc, IB = 5.0 mAdc) Base−Emitter Saturation Voltage (Note 3) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Collector−Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Small−Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) Current Gain − High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT Cibo Ccb hfe |hfe| 300 − − 120 − 8.0 4.0 480 MHz pF pF − − hFE 120 60 − − 360 − 0.3 0.95 − V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 5.0 − − − − − 50 50 Vdc Vdc Vdc nAdc nAdc Symbol Min Max Unit VCE(sat) VBE(sat) Vdc Vdc 3.0 120 − − 480 5.0 NF dB 10 7.0 CAPACITANCE (pF) 5.0 Cibo 3.0 2.0 Cobo TIME (ns) 200 100 70 50 30 20 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 tf tr td ts 10.0 7.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 20 30 40 5.0 Figure 1. Capacitance Figure 2. Switching Times http://onsemi.com 2 MMBT4124LT1G www.DataSheet4U.com AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 25°C) Bandwidth = 1.0 Hz 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) 20 40 100 SOUR...

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