Maker : Fairchild
Part No. : MMBT4258

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Product Information

PN4258 / MMBT4258 Discrete POWER & Signal Technologies PN4258 MMBT4258 C E C B TO-92 E SOT-23 Mark: 78 B PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 12 12 4.5 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN4258 350 2.8 125 357 Max *MMBT4258 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semiconductor Corporation PN4258 / MMBT4258 PNP Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES Collector-Emitter Breakdown Voltage* Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 100 µA, VBE = 0 I C = 3.0 mA, IB = 0 I C = 100 µA, I E = 0 I E = 100 µA, IC = 0 VCE = 6.0 V, VBE = 0 VCE = 6.0 V, VBE = 0, TA = 65°C 12 12 12 4.5 0.01 5.0 V V V V µA µA ON CHARACTERISTICS* hFE DC Current Gain I C = 1.0 mA, VCE = 0.5 V I C = 10 mA, VCE = 3.0 V I C = 50 mA, VCE = 1.0 V I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA 15 30 30 120 0.15 0.5 0.95 1.5 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.75 SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product I C = 10 mA, VCE = 5.0 V, f = 100 MHz I C = 10 mA, VCE = 10 V, f = 100 MHz VBE = 0.5 V, IC = 0, f = 1.0 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz 700 700 3.5 3.0 MHz MHz pF pF Cibo Ccb Input Capacitance Collector-Base Capacitance SWITCHING CHARACTERISTICS ton td tr toff ts tf ts Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Storage Time I C = 10 mA, IB1 = IB2 = 10 mA VCC = 1.5 V, IC = 10mA I B1 = IB2 = 1.0 mA VCC = 1.5 V, VBE(off) = 0 V, I C = 10 mA, IB1 = 1.0 mA 15 10 15 20 20 10 20 ns ns ns ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model PNP (Is=545.6E-18 Xti=3 Eg=1.11 Vaf=100 Bf=61.42 Ne=1.5 Ise=0 Ikf=50m Xtb=1.5 Br=1.426 Nc=2 Isc=0 Ikr=0 Rc=3.75 Cjc=2.77p Mjc=.1416 Vjc=.75 Fc=.5 Cje=2.65p Mje=.3083 Vje=.75 Tr=4.109n Tf=118.5p Itf=.5 Vtf=3 Xtf=6 Rb=10) PN4258 / MMBT4258 PNP Switching Transistor (continued) DC Typical Characteristics V CESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 200 125 °C Vce = 1V Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.4 0.3 25 °C 150 100 50 25 °C 0.2 125 ºC - 40 °C 0.1 0 0.1 - 40 ºC 0 0.1 0.2 0.5 1 2 5 10 20 50 100 I C - COLLECTOR CURRENT (mA) 1 10 I C - COLLECTOR CURRENT (mA) 100 VBEON - BASE EMITTER ON VOLTAGE (V) V - BASE EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 ºC 25 °C 125 ºC Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 VCE = 1V - 40 ºC 25 °C 125 ºC 1.2 0.8 0.6 0.4 0.2 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) P6 100 1 10 I C - COLLECTOR CURRENT (mA) P 65 25 Collector-Cutoff Curren...

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