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Part No. : MMBT4401LT1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT4401LT1/D Switching Transistor NPN Silicon COLLECTOR 3 1 BASE MMBT4401LT1 Motorola Preferred Device 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT4401LT1 = 2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. V(BR)CEO 40 V(BR)CBO 60 V(BR)EBO 6.0 IBEV — ICEX — 0.1 0.1 µAdc — µAdc — Vdc — Vdc Vdc     Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBT4401LT1 ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 20 40 80 100 40 VCE(sat) — — VBE(sat) 0.75 — 0.95 1.2 0.4 0.75 Vdc — — — 300 — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) fT 250 Ccb — Ceb — hie 1.0 hre 0.1 hfe 40 hoe 1.0 30 500 8.0 — 15 X 10– 4 30 kΩ 6.5 pF — pF MHz mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 30 Vdc, VEB = 2.0 Vdc, , , IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, , , IB1 = IB2 = 15 mAdc) td tr ts tf — — — — 15 ns 20 225 ns 30 v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 – 2.0 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 1.0 kΩ < 2.0 ns 200 Ω +16 V 0 CS* < 10 pF –14 V < 20 ns 1.0 kΩ CS* < 10 pF 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% + 30 V 200 Ω – 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT4401LT1 TRANSIENT CHARACTERISTICS 25°C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100°C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 REVERSE VOLTAGE (...

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