Maker : UTC
Part No. : MMBT4401

  Datasheet PDF : MMBT4401.pdf
  Cross Reference : MMBT4401 Cross Reference
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Product Information

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. NPN SILICON TRANSISTOR 3 2 1 SOT-23 *Pb-free plating product number: MMBT4401L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT4401-AE3-R MMBT4401L-AE3-R www.DataSheet4U.com Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBT4401L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 2X www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R206-035,B MMBT4401 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING* (Ta=25 , unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA 350 mW Total Device Dissipation PD mW/ Derate above 25 2.8 Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA (Ta=25 , unless otherwise specified) CHARACTERISTIC Thermal Resistance, Junction to Ambient PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (note) Emitter-Base Breakdown Voltage Collector Cut-off Current Base Cut-off Current ON CHARACTERISTICS (note) SYMBOL BVCBO BVCEO BVEBO ICEX IBL hFE1 hFE2 hFE3 hFE4 hFE5 SYMBOL θJA TEST CONDITIONS IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCE=35V, VEB=0.4V VCE=35V, VEB=0.4V RATING 357 MIN 60 40 6 TYP UNIT /W ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) MAX UNIT V V V µA µA DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE(SAT1) IC=150mA, IB=15mA VCE(SAT2) IC=500mA, IB=50mA VBE(SAT1) IC=150mA, IB=15mA VBE(SAT2) IC=500mA, IB=50mA fT Ccb Ceb hie hre hfe hoe tD tR tS tF VCC=30V, IC=150mA IB1= IB2=15mA VCE=10V, IC=20mA, f=100MHz VCB=5V, IE=0, f=140kHz VBE=0.5V, IC=0, f=140kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCE=10V, IC=1mA, f=1kHz VCC=30V, VEB=2V IC=150mA IB1=15mA VCC=30V, VEB=2V IC=150mA IB1=15mA 20 40 80 100 40 300 0.4 0.75 0.95 1.2 V V V V MHz pF pF kΩ -4 ×10 µmhos ns ns ns ns 0.75 250 SMALL SIGNAL CHARACTERISTICS1 Current Gain Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 1 0.1 40 1 6.5 30 15 8 500 30 15 20 225 30 Note: Pulse test: PulseWidth≤300µs, Duty Cycle≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R206-035,B MMBT4401 TEST CIRCUIT 30V 200 16V 0 220ns NPN SILICON TRANSISTOR 1K 500 Figure1. Saturated Turn-On Switching Timer -1.5V 6V Note:BVEBO =5V 30V 0 220ns 1k 1K 50 37 Figure2. Saturated Turn-Off Switching Timer UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R206-035,B MMBT4401 TYPICAL CHARACTERISTICS Typical Pulsed Current Gain vs Collector Current VCE =5V 400 300 200 100 125 NPN SILICON TRANSISTOR Typical Pulsed Current Gain, hFE 500 Collector-Emitter Voltage, VCESAT (V) Collector-Emitter Saturation Voltage vs Collector Current 0.4 =10 125 0.2 25 0.1 -40 1 10 100 Collector Current, IC (mA) 500 0.3 25 -40 0 0.1 0.3 1 3 10 30 100 300 Collector Current, IC (mA) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter Voltage, VBESAT (V) 1 =10 -40 Base-Emitter OnVoltage, VBEON (V) 1 Base-E...

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