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Part No. : MMBT4403LT1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT4403LT1/D Switching Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT4403LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –40 –40 –5.0 –600 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT4403LT1 = 2T ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) Base Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) Collector Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO –40 V(BR)CBO –40 V(BR)EBO –5.0 IBEV — ICEX — –0.1 –0.1 µAdc — µAdc — Vdc — Vdc Vdc     v v Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBT4403LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –150 mAdc, VCE = –2.0 Vdc)(3) (IC = –500 mAdc, VCE = –2.0 Vdc)(3) Collector – Emitter Saturation Voltage(3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) hFE 30 60 100 100 20 VCE(sat) — — VBE(sat) –0.75 — –0.95 –1.3 –0.4 –0.75 Vdc — — — 300 — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Emitter–Base Capacitance (VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) fT 200 Ccb — Ceb — hie 1.5 hre 0.1 hfe 60 hoe 1.0 100 500 8.0 — 15 X 10– 4 30 kΩ 8.5 pF — pF MHz mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = –30 Vdc, VEB = –2.0 Vdc, , , IC = –150 mAdc, IB1 = –15 mAdc) ( (VCC = –30 Vdc, IC = –150 mAdc, , , IB1 = IB2 = –15 mAdc) td tr ts tf — — — — 15 ns 20 225 ns 30 v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT – 30 V < 2 ns +2 V 0 1.0 kΩ – 16 V 10 to 100 µs, DUTY CYCLE = 2% CS* < 10 pF 200 Ω +14 V 0 1.0 kΩ –16 V CS* < 10 pF < 20 ns – 30 V 200 Ω 1.0 to 100 µs, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT4403LT1 TRANSIENT CHARACTERISTICS 25...

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