Maker : Fairchild
Part No. : MMBT4403

  Datasheet PDF : MMBT4403.pdf
  Cross Reference : MMBT4403 Cross Reference
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Product Information

2N4403 / MMBT4403 Discrete POWER & Signal Technologies 2N4403 MMBT4403 C E C BE TO-92 SOT-23 Mark: 2T B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value 40 45 5.0 800 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4403 625 5.0 83.3 200 Max *MMBT4403 350 2.8 357 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semiconductor Corporation 2N4403 / MMBT4403 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBEX ICEX Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current I C = 1.0 mA, IB = 0 IC = 0.1 mA, IE = 0 I E = 0.1 A, I C = 0 VCE = 35 V, VEB = 0.4 V VCE = 35 V, VBE = 0.4 V 40 45 5.0 0.1 0.1 V V V µA µA ON CHARACTERISTICS hFE DC Current Gain IC IC IC IC IC IC IC IC IC = 0.1 mA, VCE = 1.0 V = 1.0 mA, VCE = 1.0 V = 10 mA, VCE = 1.0 V = 150 mA, VCE = 2.0 V* = 500 mA, VCE = 2.0 V* = 150 mA, I B = 15 mA = 500 mA, I B = 50 mA = 150 mA, I B = 15 mA* = 500 mA, I B = 50 mA 30 60 100 100 20 300 0.4 0.75 0.95 1.3 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage 0.75 SMALL SIGNAL CHARACTERISTICS fT Ccb Ceb hie hre hfe hoe Current Gain - Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance I C = 20 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, I E = 0, f = 140 kHz VBE = 0.5 V, I C = 0, f = 140 kHz I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz I C = 1.0 mA, VCE = 10 V, f = 1.0 kHz 200 8.5 30 1.5 0.1 60 1.0 15 8.0 500 100 µmhos MHz pF pF kΩ x 10 -4 SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, IC = 150 mA, IB1 = 15 mA VCC = 6.0 V, I C = 150 mA I B1 = I B2 = 15 mA 15 20 225 30 ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% ...

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