Maker : Micro Commercial Components
Part No. : MMBT4403

  Datasheet PDF : MMBT4403.pdf
  Cross Reference : MMBT4403 Cross Reference
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Product Information

MCC Features • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT4403 Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation C Pin Configuration Top View PNP General Purpose Amplifier SOT-23 A D 2T B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=100µAdc, IE=0) Emitter-Base Breakdown Voltage (I E=100µAdc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc, VCE=2.0Vdc) (I C=500mAdc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f=100MHz) Output Capacitance (VCB=10Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=0.5Vdc, IC=0, f=1.0MHz) Delay Time (VCC=3.0Vdc, VBE=2.0Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=3.0Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µs, Duty Cycle ≤ 2.0% Min 40 40 5.0 0.1 0.1 Max Units Vdc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Vdc Vdc µAdc µAdc G F E C B H J ON CHARACTERISTICS hFE 30 60 100 100 20 K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 300 VCE(sat) 0.4 0.75 0.75 0.95 1.30 Vdc VBE(sat) Vdc DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE SMALL-SIGNAL CHARACTERISTICS fT Ccb Ceb 200 8.5 30.0 15 20 225 30 MHz pF pF ns ns ns ns .035 .900 Suggested Solder Pad Layout .031 .800 SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width .079 2.000 inches mm .037 .950 .037 .950 www.mccsemi.com MMBT4403 DC Current Gain vs Collector Current 300 VCE = 10V 250 200 hFE 150 100 50 VBE(ON) - (V) 0.6 0.4 T = 100°C A 0.2 0 0.1 1.2 1.0 0.8 MCC Base-Emitter ON Voltage vs Collector Current VCE = 5.0V TA = 25°C 0.1 1 IC (mA) 10 100 1.0 IC - (mA) 10 100 Pulsed Base Saturation Volatge vs Collector Current -1.5 IC/IB = 10 -1.3 -1.1 VBE(SAT) - (V) -0.9 VCE(SAT) - (V) -.1 -.5 Pulsed Collector Saturation Voltage vs Collector Current IC/IB = 10 -0.7 -.05 -0.5 0 -1.0 -.02 -1.0 -10 -100 IC - (mA) -1000 -10 IC - (mA) -100 -1000 Collector Reverse Current vs Reverse Bias Voltage 100 0 TA = 25°C 100 ICES - (µA) 10 pF Input and Output Capacitances vs Reverse Bias Voltage 20 TA = 25°C 16 CIBO 12 8 4 1.0 0 -10 -20 -30 VCE - (V) -40 -50 -60 0 -0.1 COBO -1.0 Volts - (V) -10 www.mccsemi.com MMBT4403 Maximum Power Dissipation vs Ambient Temperature 800 1000 MCC Turn On and Turn Off Times vs Collector Current TO-92 toff 100 T - (ns) ton 10 600 PD(MAX) - (mW) 400 200 SOT-23 0 0 50 100 TA - (°C) Contours of Constant Gain Bandwidth Product (fT) 1000 -10 -8 100 VCE - (V) -4 -1.0 -.8 -.4 0 -0.1 1.0 -1.0 -10 IC - (mA) *25MHz increments from 50 to 200MHz -100 10 td 100 IC - (mA) 1000 T - (ns) ts tf tr IB1 = IB2 = IC/10 150 200 1.0 10 IB1 = IB2 = IC/10 VCC(OFF) = 15V 100 IC - (mA) Switching Times vs Collector Current 1000 10 www.mccsemi.com ...

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