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Part No. : MMBT489LT1

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www.DataSheet4U.com MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO VCBO VEBO IC ICM Max 30 50 5.0 1.0 2.0 Unit Vdc Vdc Vdc A A 30 VOLTS, 2.0 AMPERES NPN TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Total Device Dissipation (Single Pulse < 10 s) Junction and Storage Temperature Range Symbol PD 310 2.5 RqJA PD 710 5.7 RqJA PDsingle TJ, Tstg 176 575 −55 to +150 mW mW/°C °C/W 403 mW mW/°C °C/W Max Unit 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM N3 M G G 1 mW °C N3 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 X 1.0 inch Pad ORDERING INFORMATION Device MMBT489LT1 MMBT489LT1G Package SOT−23 SOT−23 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 4 Publication Order Number: MMBT489LT1/D MMBT489LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector− Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Collector−Emitter Cutoff Current (VCES = 30 Vdc) Emitter Cutoff Current (VEB = 4.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 50 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 mA, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz Output Capacitance (f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% hFE 300 300 200 VCE(sat) − − − VBE(sat) − VBE(on) − fT 100 Cobo − 15 − pF 1.1 MHz 1.1 V 0.200 0.125 0.075 V − 900 − V V(BR)CEO 30 V(BR)CBO 50 V(BR)EBO 5.0 ICBO − ICES − IEBO − 0.1 0.1 mAdc 0.1 mAdc − mAdc − Vdc − Vdc Vdc Symbol Min Max Unit 1.0 0.9 0.8 0.7 VCE (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 IC = 500 mA IC = 100 mA 0.001 0.01 Ib (A) 0.1 0.2 IC = 1 A VCE (V) IC = 2 A 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 0.01 Ic (A) 0.1 1 2 Ic/Ib = 100 Ic/Ib = 10 Figure 1. VCE versus Ib Figure 2. VCE versus Ic http://onsemi.com 2 MMBT489LT1 800 700 600 VBE(on) (V) 500 hFE 400 300 200 100 0 0.001 0.01 Ic (A) 0.1 1 2 0.2 0 −55°C +25°C 0.8 0.6 0.4 +125°C −55°C +25°C VCE = 5 V +125°C 1.0 1.2 VCE = 5 V 0.001 0.01 Ic (A) 0.1 1 2 Figure 3. hFE versus Ic Figure 4. VBE(on) versus Ic 1.2 1.0 Ic/Ib = 10 0.8 VBE (V) Ic/Ib = 100 0.6 0.4 0.2 0 IC COLLECTOR CURRENT (A) 10 1 1 ms 10 ms 100 ms 1s SINGL...

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