Maker : Motorola
Part No. : MMBTA92LT1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA92LT1/D High Voltage Transistors PNP Silicon 1 BASE COLLECTOR 3 MMBTA92LT1* MMBTA93LT1 *Motorola Preferred Device 2 EMITTER 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA92 –300 –300 –5.0 –500 MMBTA93 –200 –200 –5.0 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBTA92LT1 = 2D; MMBTA93LT1 = 2E THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) (VCB = –160 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. V(BR)CEO MMBTA92 MMBTA93 V(BR)CBO MMBTA92 MMBTA93 V(BR)EBO ICBO MMBTA92 MMBTA93 IEBO — — — –0.25 –0.25 –0.1 –300 –200 –5.0 — — — –300 –200 — — Vdc Vdc Vdc µAdc µAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBTA92LT1 MMBTA93LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(3) DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –30 mAdc, VCE = –10 Vdc) Collector – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) Base–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) hFE Both Types Both Types MMBTA92 MMBTA93 VCE(sat) MMBTA92 MMBTA93 VBE(sat) — — — –0.5 –0.5 –0.9 Vdc 25 40 25 25 — — — — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width MMBTA92 MMBTA93 fT Ccb — — 6.0 8.0 50 — MHz pF v 300 ms, Duty Cycle v 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBTA92LT1 MMBTA93LT1 150 100 hFE, DC CURRENT GAIN +25°C 70 50 –55°C TJ = +125°C VCE = –10 Vdc 30 20 15 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 50 Cib C, CAPACITANCE (pF) 20 10 5.0 f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) 100 80 60 40 30 20 TJ = 25°C VCE = –20 Vdc 2.0 Ccb 1.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 VR, REVERSE VOLTAGE (VOLTS) 0 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –50 –100 Figure 2. Capacitances Figure 3. Current–Gain — Bandwidth Product –1.0 –0.8 V, VOLTAGE (VOLTS) VBE @ VCE = –10 V –0.6 –0.4 –0.2 VCE(sat) @ IC/IB = 10 mA 0 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –50 –100 Figure 4. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMBTA92LT1 MMBTA93LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SUR...

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