Maker : Fairchild
Part No. : MMBTA92

Datasheet PDF : MMBTA92.pdf
Cross Reference : MMBTA92 Cross Reference
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Product Information

MPSA92 / MMBTA92 / PZTA92 MPSA92 MMBTA92 C PZTA92 C E C B E C B TO-92 E SOT-23 Mark: 2D B SOT-223 PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Value 300 300 5.0 500 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA92 625 5.0 83.3 200 Max *MMBTA92 350 2.8 357 **PZTA92 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  2000 Fairchild Semiconductor International MPSA92/MMBTA92/PZTA92 Rev A MPSA92 / MMBTA92 / PZTA92 PNP High Voltage Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 µA, IE = 0 IE = 100 µA, IC = 0 VCB = 200 V, IE = 0 VEB = 3.0 V, IC = 0 300 300 5.0 0.25 0.1 V V V µA µA ON CHARACTERISTICS* hFE DC Current Gain IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V IC = 20 mA, IB = 2.0 mA IC = 20 mA, IB = 2.0 mA 25 40 25 0.5 0.9 V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Ccb Current Gain - Bandwidth Product Collector-Base Capacitance IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 20 V, IE = 0, f = 1.0 MHz 50 6.0 MHz pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model PNP (Is=218.9f Xti=3 Eg=1.11 Vaf=100 Bf=99 Ne=1.307 Ise=218.9f Ikf=.2016 Xtb=1.5 Br=24.67 Nc=2 Isc=0 Ikr=0 Rc=7 Cjc=19.88p Mjc=.4876 Vjc=.75 Fc=.5 Cje=81.49p Mje=.3493 Vje=.75 Tr=516.9p Tf=1.395n Itf=1.5 Vtf=22 Xtf=270 Rb=10) Typical Characteristics DC Current Gain vs Collector Current h FE - DC CURRENT GAIN 140 120 100 80 60 40 20 0 0.1 25 °C 125 ºC VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current β = 10 0.6 0.4 125 ºC - 40 ºC 0.2 25 °C - 40 ºC VCE = 5V 1 10 I C - COLLECTOR CURRENT (mA) 100 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 MPSA92 / MMBTA92 / PZTA92 PNP High Voltage Amplifier (continued) Typical Characteristics (continued) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1 IC β = 10 - 40 ºC 25 °C 125 ºC VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.4 V CE = 5V 1 10 I C - COLLECTOR CURRENT (mA) 100 0.2 10 - COLLECTOR CURRENT (mA) 100 Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) JUNCTION CAPACITANCE (pF) Junction Capacitance vs Reverse Bias Voltage 10 f = 1.0 MHz C ib 100 VCB = 150V 10 1 1 C ob 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) 150 0.1 0.1 1 10 V R - REVERSE VOLTAGE (V) 100 f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 100 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W)...

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