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SMALL SIGNAL PNP TRANSISTORMaker : STMicroelectronics
Shortcut : MMBTA92 MMBTA92 MMBTA92 MMBTA92 MMBTA92 MMBTA92 MMBTA92 MMBTA92 MMBTA92 MMBTA92-7 MMBTA92LT1 MMBTA92LT1 MMBTA92LT1 MMBTA93 MMBTA93 MMBTA93 MMBTA93LT1 MMBTA93LT1 MMBTA93LT1 MMBTA94 MMBTA94 MMBTA94 |
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Product Information |
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® MMBTA92 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBTA92 s Marking A92 s s s SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBTA42 SOT-23 APPLICATIONS VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) s TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature o Value -300 -300 -5 -0.5 -0.6 350 -65 to 150 150 Unit V V V A A mW o o C C 1/4 January 2003 MMBTA92 THERMAL DATA R t hj-amb • Thermal Resistance Junction-Ambient 2 Max 357.1 o C/W • Device mounted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = -200 V I C = -100 µA -300 Min. Typ. Max. -100 Unit nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = -1 mA -300 V I E = -100 µA -5 V V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I C = -20 mA I C = -20 mA I C = -1 mA I C = -10 mA I C = -30 mA I B = -2 mA I B = -2 mA V CE = -10 V V CE = -10 V V CE = -10 V 25 40 40 50 50 -0.5 -0.9 V V fT C CEO Transition Frequency Collector-Emitter Capacitance I C = -10 mA V CE = -20 V f = 50MHz V CE = -20 V f = 1 MHz MHz pF ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % 2/4 MMBTA92 SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 3/4 MMBTA92 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 ... |
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