Maker : ON
Part No. : MMBTA93LT1

  Datasheet PDF : MMBTA93LT1.pdf
  Cross Reference : MMBTA93LT1 Cross Reference
  Buy Component : MMBTA93LT1 Find Stock and Price

Shortcut : MMBTA93LT1  MMBTA93LT1  MMBTA93LT1 

Product Information

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA92LT1/D High Voltage Transistors PNP Silicon 1 BASE COLLECTOR 3 * MMBTA92LT1 MMBTA93LT1 *Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA92 –300 –300 –5.0 –500 MMBTA93 –200 –200 –5.0 Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBTA92LT1 = 2D; MMBTA93LT1 = 2E THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –200 Vdc, IE = 0) (VCB = –160 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. V(BR)CEO MMBTA92 MMBTA93 V(BR)CBO MMBTA92 MMBTA93 V(BR)EBO ICBO MMBTA92 MMBTA93 IEBO — — — –0.25 –0.25 –0.1 –300 –200 –5.0 — — — –300 –200 — — Vdc Vdc Vdc µAdc µAdc REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1998 1 MMBTA92LT1 MMBTA93LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(3) DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –30 mAdc, VCE = –10 Vdc) Collector – Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) Base–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) hFE Both Types Both Types MMBTA92 MMBTA93 VCE(sat) MMBTA92 MMBTA93 VBE(sat) — — — –0.5 –0.5 –0.9 Vdc 25 40 25 25 — — — — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = –20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width MMBTA92 MMBTA93 fT Ccb — — 6.0 8.0 50 — MHz pF v 300 ms, Duty Cycle v 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBTA92LT1 MMBTA93LT1 300 250 hFE , DC CURRENT GAIN 200 25°C 150 –55°C 100 50 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 TJ = +125°C VCE = 10 Vdc Figure 1. DC Current Gain 100 Cib @ 1MHz f T, CURRENT–GAIN — BANDWIDTH (MHz) 150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 Vdc F = 20 MHz 17 19 21 C, CAPACITANCE (pF) 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current–Gain — Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ –55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ –55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ –55°C, VCE = 10 V 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MMBTA92LT1 MMBTA93LT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT P...

Link URL