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Part No. : MRF8S18120HSR3

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Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 18.2 18.6 18.7 hD (%) 49.8 51.4 53.9 MRF8S18120HR3 MRF8S18120HSR3 1805 - 1880 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs • Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ] 120 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg. Gps (dB) 17.9 18.2 18.3 hD (%) 41.0 41.9 43.2 SR1 @ 400 kHz (dBc) - 64 - 63 - 61 SR2 @ 600 kHz (dBc) - 76 - 76 - 76 EVM (% rms) 1.6 1.7 2.0 CASE 465- 06, STYLE 1 NI - 780 MRF8S18120HR3 Frequency 1805 MHz 1840 MHz 1880 MHz CASE 465A - 06, STYLE 1 NI - 780S MRF8S18120HSR3 Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Optimized for Doherty Applications www.DataSheet4U.com • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRF8S18120HR3 MRF8S18120HSR3 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79°C, 72 W CW, 28 Vdc, IDQ = 800 mA Case Temperature 79°C, 120 W CW, 28 Vdc, IDQ = 800 mA Symbol RθJC Value (1,2) 0.47 0.46 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 260 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.3 Adc) VGS(th) VGS(Q) VDS(on) 1.2 1.8 0.1 1.8 2.6 0.2 2.7 3.3 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW, f = 1805 MHz Power Gain Gps 17 18.2 20 Drain Efficiency Input Return Loss ηD IRL 48 — 49.8 - 11 — -8 dB % dB W IRL (dB) - 11 - 15 - 12 Pout @ 1 dB Compression Point, CW P1dB 112 — — www.DataSheet4U.com Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW Gps hD Frequency (dB) (%) 1805 MHz 1840 MHz 1880 MHz 18.2 18.6 18.7 49.8 51.4 53.9 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to...

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