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Part No. : MRF8S9100HSR3

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Freescale Semiconductor Technical Data Document Number: MRF8S9100H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3 19.1 hD (%) 51.6 52.9 54.1 MRF8S9100HR3 MRF8S9100HSR3 920 - 960 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ] 108 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg. Gps (dB) 19.1 19.1 19.0 hD (%) 43 44 45 SR1 @ 400 kHz (dBc) - 64.1 - 63.6 - 62.8 SR2 @ 600 kHz (dBc) - 74.5 - 74.6 - 75.1 EVM (% rms) 1.8 2.0 2.3 CASE 465- 06, STYLE 1 NI - 780 MRF8S9100HR3 Frequency 920 MHz 940 MHz 960 MHz CASE 465A - 06, STYLE 1 NI - 780S MRF8S9100HSR3 Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant www.DataSheet4U.com • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +70 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRF8S9100HR3 MRF8S9100HSR3 1 RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW, 28 Vdc, IDQ = 500 mA Case Temperature 81°C, 72 W CW, 28 Vdc, IDQ = 500 mA Case Temperature 82°C, 45 W CW, 28 Vdc, IDQ = 700 mA Symbol RθJC Value (1,2) 0.60 0.65 0.69 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 460 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 500 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.7 Adc) Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW www.DataSheet4U.com VGS(th) VGS(Q) VDS(on) 1.4 2.1 0.1 2.2 2.9 0.17 2.9 3.6 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 72 W CW, f = 920 MHz Gps ηD IRL P1dB Gps (dB) 19.3 19.3 19.1 18 50 — 100 19.3 51.6 - 12.4 — hD (%) 51.6 52.9 54.1 23 — -9 — IRL (dB) - 12.4 - 14.3 - 12.2 dB % dB W Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 72 W CW Frequency 920 MHz 940 MHz 960 MHz 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tool...

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