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Part No. : MRF8S9170NR3

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Freescale Semiconductor Technical Data Document Number: MRF8S9170N Rev. 0, 9/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.1 18.9 hD (%) 36.5 36.1 36.0 Output PAR (dB) 6.0 6.1 6.0 ACPR (dBc) - 36.6 - 36.7 - 36.1 MRF8S9170NR3 920 - 960 MHz, 50 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ] 177 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings www.DataSheet4U.com Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CASE 2021 - 02, STYLE 1 OM - 780 - 2 Rating Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +70 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 78°C, 50 W CW, 28 Vdc, IDQ = 1000 mA Case Temperature 82°C, 170 W CW, 28 Vdc, IDQ = 1000 mA Symbol RθJC Value (2,3) 0.38 0.33 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRF8S9170NR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 355 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.9 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.3 3.1 0.19 3 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 50 W Avg., f = 920 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ra...

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