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Part No. : MRF8S9260HSR3

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Freescale Semiconductor Technical Data Document Number: MRF8S9260H Rev. 0, 12/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1700 mA, Pout = 75 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 18.8 18.7 18.6 hD (%) 36.0 37.0 38.5 Output PAR (dB) 6.3 6.2 5.9 ACPR (dBc) -39.5 -38.6 -37.1 MRF8S9260HR3 MRF8S9260HSR3 920-960 MHz, 75 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ] 260 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate- Source Voltage Range for Improved Class C Operation • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465B-03, STYLE 1 NI-880 MRF8S9260HR3 CASE 465C-02, STYLE 1 NI-880S MRF8S9260HSR3 Table 1. Maximum Ratings Rating Drain-Source www.DataSheet4U.com Voltage Gate-Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C (1,2) Symbol VDSS VGS VDD Tstg TC TJ CW Value -0.5, +70 -6.0, +10 32, +0 -65 to +150 150 225 280 1.5 Unit Vdc Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 75 W CW, 28 Vdc, IDQ = 1800 mA Case Temperature 80°C, 265 W CW, 28 Vdc, IDQ = 1100 mA Symbol RθJC 0.37 0.31 Value (2,3) Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRF8S9260HR3 MRF8S9260HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1700 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 4.4 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.4 0.1 2.3 3.1 0.2 3 3.9 0.3 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, Pout = 75 W Avg., f = 960 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps ηD PAR ACPR...

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