Maker : NanoAmp Solutions
Part No. : N02L163WN1A

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NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L163WN1A www.DataSheet4U.com 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit Overview The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L163WN1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 128Kb x 16 SRAMs. Features • Single Wide Power Supply Range 2.3 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.8V • Very fast output enable access time 30ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Compact space saving BGA package available Product Family Part Number N02L163WN1AB N02L163WN1AT N02L163WN1AB1 N02L163WN1AT2 Package Type 48 - BGA 44 - TSOP II 48 - BGA Pb-Free 44 - TSOP II Green 55ns @ 2.7V -40oC to +85oC 2.3V - 3.6V 70ns @ 2.3V 2 µA 2 mA @ 1MHz Operating Temperature Power Supply (Vcc) Speed Standby Operating Current (ISB), Current (Icc), Typical Typical (DOC# 14-02-014 REV L ECN# 01-1000) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1 NanoAmp Solutions, Inc. Pin Configurations A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC N02L163WN1A 1 2 OE UB I/O10 I/O11 I/O12 www.DataSheet4U.com 3 A0 A3 A5 NC NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 NC I/O0 I/O2 VCC VSS I/O6 I/O7 NC A B C D E F G H LB I/O8 I/O9 VSS VCC N02L163WN1A TSOP I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) 6 x 8 mm Pin Descriptions Pin Name A0-A16 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground (DOC# 14-02-014 REV L ECN# 01-1000) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 2 NanoAmp Solutions, Inc. Functional Block Diagram N02L163WN1A www.DataSheet4U.com Address Inputs A0 - A3 Word Address Decode Logic Address Inputs A4 - A16 Page Address Decode Logic 32K Page x 16 word x 16 bit RAM Array Input/ Output Mux and Buffers Word Mux I/O0 - I/O7 I/O8 - I/O15 CE WE OE UB LB Control Logic Functional Description CE H L L L L WE X X L H H OE X X X3 L H UB X H L1 L1 X LB X H L1 L1 X I/O0 - I/O151 High Z High Z Data In Data Out High Z MODE Standby2 Active Write3 Read Active POWER Standby Active Active Active Active 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standb...

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