Maker : ON Semiconductor
Part No. : N02L83W2A

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N02L83W2A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit Overview The N02L83W2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N02L83W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 8 SRAMs www.DataSheet4U.com Features • Single Wide Power Supply Range 2.3 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.8V • Very fast output enable access time 30ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver Product Family Part Number N02L83W2AT N02L83W2AN N02L83W2AT2 N02L83W2AN2 Package Type 32 - TSOP I 32 - STSOP I 32 - TSOP I Green 32 - STSOP I Green 55ns @ 2.7V -40oC to +85oC 2.3V - 3.6V 70ns @ 2.3V 2 µA 2 mA @ 1MHz Operating Power Temperature Supply (Vcc) Speed Standby Operating Current (ISB), Current (Icc), Typical Typical Pin Configuration A11 A9 A8 A13 WE CE2 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 A3 Pin Descriptions Pin Name A0-A17 WE CE1, CE2 OE I/O0-I/O7 VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Power Ground N02L83W2A STSOP-I, TSOP-I ©2008 SCILLC. All rights reserved. July 2008 - Rev. 8 Publication Order Number: N02L83W2A/D N02L83W2A Functional Block Diagram www.DataSheet4U.com Address Inputs A0 - A3 Word Address Decode Logic Word Mux Input/ Output Mux and Buffers Address Inputs A4 - A17 Page Address Decode Logic 16K Page x 16 word x 8 bit RAM Array I/O0 - I/O7 CE1 CE2 WE OE Control Logic Functional Description CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X2 L H I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby Write2 Read Active 1 POWER Standby Standby Active Active Active 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF VIN = 0V, f = 1 MHz, TA = 25oC 1. These parameters are verified in device characterization and are not 100% tested Rev. 8 | Page 2 of 10 | www.onsemi.com N02L83W2A Absolute Maximum Ratings1 Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER Rating –0.3 to VCC+0.3 –0.3 to 4.5 500 –40 to 125 -40 to +85 260oC, 10sec www.DataSheet4U.com Unit V V mW oC oC oC 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended period...

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