Maker : NanoAmp Solutions
Part No. : N04Q16YYC2B

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Product Information

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04Q16yyC2B Advance Information www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The 4Mb SRAM is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves active operating power and the dual power supply rails allow very low voltage operation while maintaining 3V I/O capability. The device can operate over a very wide temperature range of 0oC to +70oC for the lowest power and is also available in the industrial range of -40oC to +85oC. The devices are available in standard BGA and TSOP packages. The devices are also available as Known Good Die (KGD) for embedded package applications. Features • Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V 2.3V - 2.7V 2.7V - 3.6V • Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ 2.5V Vcc with 3V VccQ • Very low standby current 50nA typical for 1.2V operation • Very low operating current 400µA typical for 1.2V operation at 1µs • Very low Page Mode operating current 80µA typical for 1.2V operation at 1µs • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Automatic power down to standby mode • BGA, TSOP and KGD options • RoHS Compliant Product Options Part Number N04Q1612C2Bx-15C N04Q1618C2Bx-15C N04Q1618C2Bx-70C N04Q1625C2Bx-15C N04Q1630C2Bx-70C I/O x16 x16 x16 x16 x16 Typical Standby Current 50nA 50nA 200nA 800nA 800nA Vcc (V) 1.2 1.8 2.5 3.0 VccQ (V) 1.2, 1.8, 3 1.8, 2.5, 3 2.5, 3 3.0 Speed (nS) 150ns 150ns 70ns 150ns 70ns Typical Operating Operating Current Temperature 0.4 mA @ 1MHz 0.4 mA @ 1MHz 0.6 mA @ 1MHz 0.6 mA @ 1MHz 2.2mA @ 1MHz 0oC to +70oC Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 1 N04Q16yyC2B NanoAmp Solutions, Inc. Pin Configurations (4Mb) Advance Information www.DataSheet4U.com A4 A3 A2 A1 A0 CE1 I/O0 I/O1 I/O2 I/O3 VCCQ VSSQ I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 CE2 A8 A9 A10 A11 A17 1 A B C D E F G H LB I/O8 I/O9 2 OE UB I/O10 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC VSSQ I/O11 VCCQ I/O12 I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) TSOP II Pin Descriptions Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS VSSQ NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Core Power Power for I/O Core Ground Ground for I/O Not Connected Stock No. 23451-B 2/06 The specification is ADVANCE INFORMATION and subject to change without notice. 2 N04Q16yyC2B NanoAmp Solutions, Inc. Functional Block Diagram Address Inputs (A1 - A4) Advance Information www.DataSheet4U.com Word Address Decode Logic Address Inputs (A0...

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