Maker : NanoAmp Solutions
Part No. : N08L163WC2C

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Product Information

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC2C Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L163WC2C is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs Features • Single Wide Power Supply Range 2.2 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 1.5mA at 3.0V and 1µs(Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.5V • Very fast output enable access time 25ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Ultra Low Power Sort Available Product Family Part Number Package Type Operating Temperature -40oC to +85oC Power Supply (Vcc) 2.2V - 3.6V Speed Standby Current Operating Current (ISB), (Icc), Typical Typical 2 µA 1.5 mA @ 1MHz N08L163WC2CZ1 VFBGA Pb-Free 55ns Pin Configuration 1 A B C D E F G H LB I/O8 I/O9 VSS VCC Pin Descriptions 3 A0 A3 A5 A17 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected I/O12 DNU A14 A12 A9 I/O14 I/O13 I/O15 A18 NC A8 48 Pin VFBGA (top) 6 x 8 mm Stock No. 23380-C The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1 N08L163WC2C NanoAmp Solutions, Inc. Functional Block Diagram Address Inputs A0 - A3 Word Address Decode Logic Advance Information www.DataSheet4U.com Address Inputs A4 - A18 Page Address Decode Logic 32K Page x 16 word x 16 bit RAM Array Input/ Output Mux and Buffers Word Mux I/O0 - I/O7 I/O8 - I/O15 CE1 CE2 WE OE UB LB Control Logic Functional Description CE1 H X X L L L CE2 X L X H H H WE X X X L H H OE X X X X3 L H UB X X H L1 L1 L1 LB X X H L1 L1 L1 I/O0 - I/O151 High Z High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Standby2 Write3 Read Active POWER Standby Standby Standby Active Active Active 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 10 10 Unit pF pF 1. These parameters are verified in device characterization and are not 100% tested Stock No. 23380-C The specificatio...

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