Maker : NanoAmp Solutions
Part No. : N16T1630C2B

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Product Information

www.DataSheet4U.com NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1630C2B 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1M x 16 bit Overview The N16T1630C2B is an integrated memory device containing a low power 16 Mbit SRAM built using a self-refresh DRAM array organized as 1,024,576 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N16T1630C2B is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard BGA packages compatible with other standard 1Mb x 16 SRAMs. Features • Single Wide Power Supply Range 2.7 to 3.6 Volts • Very low standby current 100µA at 3.0V (Max) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Very fast access time 55ns address access option 35ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Green option for BGA package Product Family Part Number N16T1630C2BZ Package Type 48 - BGA Operating Temperature -40oC to +85oC Power Supply (Vcc) 2.7V - 3.6V Speed 70ns 55ns Standby Operating Current (ISB), Current (Icc), Max Max @ 3.0V 100 µA 3 mA @ 1MHz N16T1630C2BZ2 Green 48 - BGA Pin Configuration (Top View) 1 A B C D E F G H LB I/O8 I/O9 VSS VCC Pin Description Pin Name A0-A19 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC I/O14 I/O13 I/O15 A18 A19 A8 48 Ball BGA 6 x 8 mm (DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1 www.DataSheet4U.com NanoAmp Solutions, Inc. Functional Block Diagram N16T1630C2B Address Inputs A0 - A19 Address Decode Logic 1M x 16 bit RAM Array Input/ Output Mux and Buffers I/O0 - I/O7 I/O8 - I/O15 CE1 CE2 WE OE UB LB Control Logic Functional Description CE1 H X L L L L CE2 X L H H H H WE X X X L H H OE X X X X3 L H UB X X H L1 L1 L 1 LB X X H L1 L1 L1 I/O0 - I/O151 High Z High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Standby Write Read Active POWER Standby Standby Standby Active Active Active 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF 1. These parameters are verified in device characterization and are not 100% tested (DOC#14-02-007 REV F ECN# 01-1103) The specifications ...

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