Maker : Fairchild
Part No. : N2222A

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Product Information

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A PN2222A MMBT2222A C PZT2222A C E C B E C B TO-92 E SOT-23 Mark: 1P B SOT-223 MMPQ2222 E2 B2 E3 B3 E4 B4 NMT2222 C2 E1 C1 E1 B1 SOIC-16 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 Mark: .1B B1 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 75 6.0 1.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  1997 Fairchild Semiconductor Corporation PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150°C VEB = 3.0 V, IC = 0 VCE = 60 V, VEB(OFF) = 3.0 V 40 75 6.0 10 0.01 10 10 20 V V V nA µA µA nA nA ON CHARACTERISTICS hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, TA = -55°C IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 35 100 50 40 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage* 0.6 0.3 1.0 1.2 2.0 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo rb’CC NF Re(hie) Current Gain - Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance (except MMPQ2222 and NMT2222) IC = 20 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 20 mA, VCB = 20 V, f = 31.8 MHz IC = 100 µA, VCE = 10 V, RS = 1.0 kΩ, f = 1.0 kHz IC = 20 mA, VCE = 20 V, f = 300 MHz 300 8.0 25 150 4.0 60 MHz pF pF pS dB Ω SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time (except MMPQ2222 and NMT2222) VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 10 25 225 60 ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A NPN General Purpose Amplifier (continued) Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN2222A 625 5.0 83.3 200 Max *PZT2222A 1,000 8.0 125 Units mW mW/°C °C/W °C/W Symbol PD RθJA Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die Max **MMBT2222A 350 2.8 357 MMPQ2222 1,000 8.0 125 240 Units mW mW/°C °C/W °C/W °C/W *Device...

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