Maker : Siemens Semiconductor Group
Part No. : OBTS949

  Datasheet PDF : OBTS949.pdf
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Product Information

HITFET® BTS 949 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 18 9.5 19 V mΩ A A 6000 mJ limitation • Maximum current adjustable with external resistor • Current sense • Status feedback with external input resistor • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M 2 3 1 IN 4 CC Overtemperature protection ESD R CC Overload protection Short circuit Short circuit protection protection Source 5 HITFET ® Semiconductor Group Page 1 14.07.1998 BTS 949 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.2V ≤ VIN ≤ 10V 1) Symbol Value 60 15 50 Unit V VDS VDS(SC) IIN no limit | IIN | ≤ 2 - 40 ... +150 - 55 ... +150 240 6000 3000 mA VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj Tstg Ptot EAS °C W mJ V TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VLD 110 92 E 40/150/56 V VIN=low or high; VA=13.5 V td = 400 ms, RI = 2 Ω, ID=0,5*19A td = 400 ms, RI = 2 Ω, ID= 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) RthJC RthJA RthJA 0.7 75 45 K/W 1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical 2 without blown air. Semiconductor Group Page 2 14.07.1998 BTS 949 Electrical Characteristics Parameter at Tj=25°C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 400 3000 max. 73 25 2.2 100 1000 6000 V µA V µA Unit VDS(AZ) IDSS VIN(th) IIN(1) 60 1.3 1500 Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage ID = 3,9 mA Input current - normal operation, ID

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