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HIGH-POWER GaAlAs IR EMITTERSMaker : OptoDiode
Shortcut : OD-880-C OD-880E OD-880F OD-880L OD-880LHT OD-880LJ OD-880PP OD-880W OD-880WHT OD-880WJ |
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HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES ANODE (CASE) .209 .212 • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package .041 .015 .183 .186 .152 .154 .100 • Narrow angle for long distance applications • OD-880F1 selected to meet minimum radiant intensity .017 .030 .040 .036 45° www.DataSheet4U.com CATHODE .197 .205 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie OD-880F OD-880F1 OD-880F OD-880F1 TEST CONDITIONS IF = 100mA 120 IF = 50mA IF = 100mA IR = 10µA VR = 0V 5 MIN 15 TYP 17 8 135 160 880 80 8 1.55 30 17 0.5 0.5 1.9 MAX UNITS mW mW/sr nm nm Deg Volts Volts pF µsec µsec Peak Emission Wavelength, λP Spectral Bandwidth at 50%, ∆λ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 Continuous Forward Current Peak Forward Current (10µs, 400Hz)2 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 190mW 100mA 3A 5V 240°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 Thermal Resistance, RTHJA2 -55°C to 100°C 100°C 350°C/W Typical 115°C/W Typical 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335 Fax: (805) 499-8108 Email: sales@optodiode.com Web Site: www.optodiode.com Page 1 of 2 HIGH-POWER GaAlAs IR EMITTERS 200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (°C) 100 NO HEAT SINK INFINITE HEAT SINK OD-880F 10 PEAK FORWARD CURRENT, Ip (amps) THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT t = 10µs 1 t = 100µs t = 500µs t T MAXIMUM RATINGS 0.1 t Ip T D= 0.01 0.01 0.1 1 DUTY CYCLE, D (%) 10 100 www.DataSheet4U.com TYPICAL CHARACTERISTICS 100 DEGRADATION CURVE IF = 20mA RELATIVE POWER OUTPUT (%) 105 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 90 IF = 50mA 80 80 60 70 TCASE = 25° C NO PRE BURN-IN PERFORMED IF = 100mA 50 101 102 103 STRESS TIME, (hrs) 104 40 60 20 0 –25 –20 –15 –10 –5 0 5 10 BEAM ANGLE, θ(deg) 15 20 25 FORWARD I-V CHARACTERISTICS 4 1.5 1.4 FORWARD CURRENT, IF (amps) POWER OUTPUT vs TEMPERATURE 3 RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 2 1 0 0.5 –50 –25 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 SPECTRAL OUTPUT 100 1,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 80 POWER OUTPUT, P (mW) o 100 60 40 10 DC PULSE 10µs, 100Hz 20 0 750 800 850 900 WAVELENGTH, λ(nm) 950 1,000 1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335 Fax: (805) 499-8108 Email: sales@optodiode.com Web Site: www.optodiode.com Page 2 of 2 ... |
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