Maker : ST Microelectronics
Part No. : P011XX

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www.DataSheet4U.com P011xx Sensitive high immunity SCRs up to 0.8 A Features ■ ■ ■ A IT(RMS) up to 0.8 A VDRM/VRRM 400 and 600 V IGT from 0.5 to 25 µA G K Description Thanks to highly sensitive triggering levels, the P011xx SCR series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, standby mode power supplies, smoke and alarm detectors. Available in through-hole or surface-mount packages, the voltage capability of this series has been upgraded since its introduction and is now available up to 600 V. Table 1. Device summary Voltage Order code 400 V P0111DA 1AA3 P0111DA 5AL3 P0111DN 5AA4 P0111MA 1AA3 P0111MA2AL3(1) P0111MN 5AA4 P0115DA 1AA3 P0115DA 5AL3 P0118DA 1AA3 P0118DA 5AL3 P0118DN 5AA4 P0118MA 2AL3 P0118MA 5AL3 1. This order code has no space. KA K G A G A TO-92 (P011xxA) SOT-223 (P011xxN) Sensitivity Package 600 V Min. 4 µA 4 µA 4 µA X X X 4 µA 4 µA 4 µA 15 µA 15 µA 0.5 µA 0.5 µA 0.5 µA X X 0.5 µA 0.5 µA Max. 25 µA 25 µA 25 µA 25 µA 25 µA 25 µA 50 µA 50 µA 5 µA 5 µA 5 µA 5 µA 5 µA TO-92 TO-92 SOT-223 TO-92 TO-92 SOT-223 TO-92 TO-92 TO-92 TO-92 SOT-223 TO-92 TO-92 X X X X X X X X January 2009 Rev 1 1/9 www.st.com 9 www.DataSheet4U.com Characteristics P011xx 1 Table 2. Symbol IT(RMS) Characteristics Absolute ratings (limiting values) Parameter TO-92 RMS on-state current (180° conduction angle) SOT-223 TO-92 IT(AV) Average on-state current (180° conduction angle) SOT-223 Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tl = 55 °C Tamb = 70 °C Tl = 55 °C Tamb = 70 °C 8 Tj = 25 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C A 7 0.24 50 1 0.1 - 40 to + 150 - 40 to + 125 A2 S A/µs A W °C 0.5 A Value 0.8 Unit A ITSM I²t dI/dt IGM PG(AV) Tstg Tj Table 3. Symbol IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM Electrical characteristics (Tj = 25 °C, unless otherwise specified) Test conditions Min. VD = 12 V RL = 140 Ω Max. Max. VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ IRG = 10 µA IT = 50 mA IG = 1 mA RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Tj = 25 °C Tj = 125 °C Tj = 125 °C Min. Min. Max. Max. Min. Max. Max. Max. 80 P0111 4 25 P0115 15 50 0.8 0.1 8 5 6 75 1.95 0.95 600 1 Max. 10 100 µA 75 P0118 0.5 µA 5 V V V mA mA V/µs V V mΩ Unit VD = 67 % VDRM ITM = 1.6 A tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM = 400 V VDRM = VRRM = 600 V VDRM = VRRM 2/9 www.DataSheet4U.com P011xx Characteristics Thermal resistance Parameter Maximum TO-92 SOT-223 TO-92 80 30 150 °C/W SOT-223 60 Unit °C/W °C/W Table 4. Symbol Rth(j-a) Rth(j-t) Rth(j-a) Junction to case (DC) Junction to tab (DC) Junction to ambient (DC) S(1) = 5 cm2 1. S = Copper surface under tab. Figure 1. Maximum average power Figure 2. dissipation versus average on-state current IT(AV)(A) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 Average and DC on-state current versus lead temperature P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 360° α = 180° D.C. (SOT-223) D.C. (TO-92) α = 180° (SOT-223) 0.4 0.3 0.2 α = 180° (TO-92) IT(AV)(A) α 0.5 0.6 0.1 0.0 0 25 50 Tlead(°C) 75 100 125 Figure 3. Average and DC on-state current versus ambient temperature Figure 4. Relative variation of thermal impedance junction to ambient versus pulse duration IT(AV)(A) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 α = 180° (TO-92) D.C. (SOT-223) K=[Zth(j-a)/Rth(j-a)] 1.00 Device mounted on FR4 with recommended pad layout TO-92 D.C. (TO-92) α = 180° (SOT-223) 0.10 SOT-223 Tamb(°C) 75 100 125 tp(s) 0.01 1E-2 1...

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