Maker : ST Microelectronics
Part No. : P0130AA

  Datasheet PDF : P0130AA.pdf
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Shortcut : P0130AA  P0130AA1EA3  P0130AA2AL3 

Product Information

® P0130AA 0.8A SCRs SENSITIVE MAIN FEATURES: A Symbol IT(RMS) VDRM/VRRM IGT Value 0.8 100 1 Unit A V µA G K DESCRIPTION The P0130AA is a gate sensitive SCR, packaged in TO-92, used in conjunction of a TN22 A.S.D™ and of a resistor in electronic starter for fluorescent tubelamps. TO-92 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C tp = 10 ms I ²t dI/dt IGM PG(AV) Tstg Tj I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 10ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 7 0.24 50 1 0.1 - 40 to + 150 - 40 to + 125 A2S A/µs A W °C Tl = 55°C Tl = 55°C Value 0.8 0.5 8 A Unit A A May 2002 - Ed: 2 1/5 P0130AA ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT VD = 12 V VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ IRG = 10 µA IT = 50 mA IG = 1 mA ITM = 1.6 A RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C tp = 380 µs Tj = 125°C RL = 140 Ω Test Conditions MIN. MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. MAX. P0130AA 0.1 1 0.8 0.1 8 5 6 25 1.95 0.95 600 1 100 µA V V V mA mA V/µs V V mΩ µA Unit VD = 67 % VDRM Threshold voltage Dynamic resistance VDRM = VRRM RGK = 1 kΩ THERMAL RESISTANCES Symbol Rth(j-i) Rth(j-a) Junction to case (DC) Junction to ambient (DC) Parameter Value 80 150 Unit °C/W °C/W PRODUCT SELECTOR Part Number P0130AA Voltage 100V Sensitivity 1 µA Package TO-92 2/5 P0130AA ORDERING INFORMATION P 01 30 SENSITIVE SCR SERIES CURRENT: 0.8A A A VOLTAGE: A: 100V Blank 1EA3 PACKING MODE: 1EA3: TO-92 bulk 2AL3: TO-92 ammopack PACKAGE: A: TO-92 SENSITIVITY: 30: 1µA OTHER INFORMATION Part Number P0130AA 1EA3 P0130AA 2AL3 Marking P0130AA P0130AA Weight 0.2 g 0.2 g Base Quantity 2500 2000 Packing mode Bulk Ammopack Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 Fig. 2-1: Average and D.C. on-state current versus lead temperature. IT(av)(A) 0.1 0.2 0.3 0.4 0.5 0.6 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Tlead or Ttab (°C) 0 25 50 75 100 125 Fig. 2-2: Average and D.C. on-state current versus ambient temperature. 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. K = [Zth(j-a)/Rth(j-a)] 1.00 IT(av)(A) 0.10 Tamb(°C) 0 25 50 75 100 125 0.01 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 3/5 P0130AA Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C Fig. 5:Relative variation of holding current versus gate-cathode resistance (typical values). IH[Rgk]/IH[Rgk=1kΩ] 6 5 4 3 2 1 Tj(°C) 0 -40 Rgk(kΩ) -20 0 20 40 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). dV/dt[Rgk] / dV/dt[Rgk=1kΩ] Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt[Cgk] / dV/dt[Rgk=1kΩ] 10.0 10 8 6 1.0 4 2 Rgk(kΩ) Cgk(nF) 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 1 2 3 4 5 6 7 Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A), I2t(A2s) ITSM(A) 8 7 tp=10ms 100.0 6 5 4 3 2 1 0 1 10 Repetitive Tamb=25°C Non repetitive Tj initial=25°C Onecycle 10.0 1.0 Num...

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