Maker : ST Microelectronics
Part No. : P40NF03L

  Datasheet PDF : P40NF03L.pdf
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Product Information

® STP40NF03L N - CHANNEL 30V - 0.020 Ω - 40A TO-220 STripFET™ POWER MOSFET TYPE STP40NF03L s V DSS 30 V R DS(o n) < 0.022 Ω ID 40 A www.DataSheet4U.com s TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS ID ID I DM (•) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature o Value 30 30 ± 20 40 28 160 70 0.46 250 -65 to 175 175 ( 1) starting Tj = 25 oC, ID =20A , VDD = 15V Unit V V V A A A W W /o C m/J o o C C (•) Pulse width limited by safe operating area October 1999 1/8 STP40NF03L THERMAL DATA R thj -case R thj -amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature F or Soldering Purpose 2.1 62.5 300 o o C/W C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l www.DataSheet4U.com Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 Min. 30 Typ. Max. Unit V V (BR)DSS I DSS IGSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c =125 oC 1 10 ± 100 µA µA nA ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V V GS = 4.5 V Test Con ditions ID = 250 µA ID = 20 A I D = 20 A 40 Min. 1 Typ. 1.7 0.018 0.028 Max. 2.5 0.022 0.035 Unit V Ω Ω A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =20 A V GS = 0 Min. Typ. 20 830 230 92 Max. Unit S pF pF pF 2/8 STP40NF03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd www.DataSheet4U.com Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 15 V I D = 20 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) V DD = 24 V ID = 40 A V GS = 5 V Min. Typ. 35 205 18 7 8 Max. Unit ns ns 23 nC nC nC SWITCHING OFF Symbo l t d(of f) tf t d(of f) tf tc Parameter Turn-off Delay T ime Fall T ime Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 15 V I D = 20 A V GS = 4.5 V R G = 4.7 Ω (Resistive Load, see fig. 3) Vclamp = 24 V I D = 20 A V GS = 4.5 V R G = 4.7 Ω (Induct ive Load, see fig. 5) Min. Typ. 90 240 150 155 340 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 40 A V GS = 0 65 72 2 I SD = 40 A di/dt = 100 A/µs T j = 150 o C V DD = 15 V (see test circuit, fig. 5) Test Con ditions Min. Typ. Max. 40 160 1.5 Unit A A V ns nC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STP40NF03L Output Characteristics Transfer Characte...

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