Maker : Peregrine Semiconductor
Part No. : PE4250

Datasheet PDF : PE4250.pdf
Cross Reference : PE4250 Cross Reference
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Product Information

Product Specification PE4250 Product Description The PE4250 is a HaRP™-enhanced Reflective SPDT (single pole double throw) RF Switch for use in general switching applications and mobile infrastructure. This device offers a flexible supply voltage of 3.3/5V, single-pin or complementary pin control inputs, and 4000 V ESD tolerance. It presents a simple alternative solution to pin diode and mechanical relay switches. Peregrine’s HaRP™ technology enhancements deliver high linearity and exceptional performance. It is an innovative feature of the UltraCMOS™ process, providing performance superior to GaAs with the economy and integration of conventional CMOS. SPDT UltraCMOS™ RF Switch 10 – 3000 MHz, Reflective Features • • • • • • • • • • HaRP-Technology Enhanced Low Insertion Loss: 0.65 dB @ 1000 MHz High Isolation: 51 dB @ 1000 MHz P1dB typical: +30.5 dBm IIP3 typical: +59 dBm Fast switching time: 150 ns Flexible supply voltage: 3.3 V ±10% or 5.0 V ±10% supply (see table 3) Excellent ESD protection: 4000 V HBM No blocking capacitors required Single pin or complementary control inputs Figure 1. Functional Diagram RFC ESD Figure 2. Package Type RF2 8-lead MSOP ESD RF1 ESD CMOS Control Driver www.DataSheet4U.com V1 V2 Table 1. Target Electrical Specifications Temp = 25°C, VDD = 3.3 or 5.0 V Parameter Operation Frequency 1 Conditions 10 MHz 1000 MHz 2000 MHz 3000 MHz 1000 MHz 2000 MHz 3000 MHz 1000 MHz 2000 MHz 3000 MHz 50 - 3000 MHz 50 - 3000 MHz, +18 dBm per tone, 5 MHz spacing 50% CTRL to 10/90% RF Min 10 Typical 0.6 0.65 0.75 0.75 51 48 40 25 23 20 30.5 59 150 Max 3000 0.65 0.70 0.80 0.90 Units MHz dB dB dB dB dB dB dB dB dB dB dBm dBm ns Insertion Loss (RF1/RF2) Isolation (RFC to RF1/RF2) 50 46 35 Return Loss Input 1 dB Compression2 Input IP3 Switching Time Notes: 300 1. Device linearity will begin to degrade below 10 MHz. 2. Note Absolute Maximum rating of PIN = 27 dBm. Document No. 70-0254-02 │ www.psemi.com ©2008-2009 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 9 PE4250 Product Specification Figure 3. Pin Configuration (Top View) V2 V1 1 2 8 7 6 5 RF2 GND GND RF1 Table 4. Absolute Maximum Ratings Symbol VDD VI TST PIN VESD Parameter/Conditions Power supply voltage Voltage on any control input Storage temperature range RF Input power (50Ω) ESD voltage (HBM)5 ESD voltage (Machine Model) Min 3 -0.3 -65 Max 5.5 5.5 150 27 4000 250 Units V V °C dBm V 4250 RFC 3 N/C or GND 4 Note: 5. Human Body Model (HBM, MIL_STD 883 Method 3015.7) Table 2. Pin Descriptions Pin No. Pin Name Description This pin supports two interface options: Single-pin control mode. A nominal 3-volt or 5-volt supply connection is required. Complementary-pin control mode. A complementary CMOS control signal to V1 is supplied to this pin. Switch control input, CMOS logic level. RF Common port.3 No Connect or Ground RF1 port.3 Ground Connection. Traces should be physically short and connected to ground plane for best performance. Ground Connection. Traces should be physically short and connected to ground plane for best performance. RF2 port.3 1 V2 Exceeding absolute maximum ratings may cause permanent damage. Operation should be restricted to the limits in the Operating Ranges table. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. 2 3 4 5 6 V1 RFC N/C or GND RF13 GND Latch-Up Avoidance Unlike conventional CMOS devices, UltraCMOS™ devices are immune to latch-up. Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS™ device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating. Switching Frequency 7 GND www.DataSheet4U.com 8 RF23 Note 3. All RF pins must be DC blocked with an external series capacitor or held at 0 VDC. ...

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