Maker : Peregrine Semiconductor
Part No. : PE42510A

  Datasheet PDF : PE42510A.pdf
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Product Information

Product Specification PE42510A Product Description The following specification defines an SPDT (single pole double throw) switch for use in cellular and other wireless applications. The PE42510A uses Peregrine’s UltraCMOS™ process and it also features HaRP™ technology enhancements to deliver high linearity and exceptional harmonics performance. HaRP™ technology is an innovative feature of the UltraCMOS™ process providing upgraded linearity performance. The PE42510A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram RFC SPDT High Power UltraCMOS™ RF Switch 30 - 2000 MHz Features • No blocking capacitors required • 50 Watt P1dB compression point • 10 Watts <8:1 VSWR (Normal Operation) • 29 dB Isolation @800 MHz • < 0.3 dB Insertion Loss at 800 MHz • 2fo and 3fo < -84 dBc @ 42.5 dBm • ESD rugged to 2.0 kV HBM • 32-lead 5x5 mm QFN package Figure 2. Package Type 32-lead 5x5 mm QFN RF1 RF2 CMOS Control Driver and ESD CTRL www.DataSheet4U.com Table 1. Electrical Specifications @ 25 °C, VDD = 3.3 V (ZS = ZL = 50 Ω) unless otherwise noted Parameter RF Insertion Loss 0.1 dB Input Compression Point Isolation (Supply Biased): RF to RFC Unbiased Isolation: RF - RFC, VDD, V1=0 V RF (Active Port) Return Loss 2nd Harmonic 3rd Harmonic Switching Time Lifetime switch cycles 800 MHz @ +42.5 dBm 50% of CTRL to 10/90% of RF No RF applied 30 MHz ≤ 1 GHz 1 GHz < 2 GHz 800 MHz, 50% duty cycle 800 MHz 27 dBm, 800 MHz 25 5 15 22 -84 0.04 10^10 -81 0.5 Conditions Min Typ 0.4 0.5 45.4 29 Max 0.6 0.7 Units dB dB dBm dB dB dB dBc ms cycles Note: The device was matched with 1.6 nH inductance per RF port Document No. 70-0266-01 │ www.psemi.com ©2008 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 7 PE42510A Product Specification Figure 3. Pin Configuration (Top View) GND GND GND GND GND GND GND RFC 32 31 30 29 28 27 26 25 Table 3. Operating Ranges Parameter Frequency Range Min 30 Typ Max 2000 40 27 Units MHz dBm dBm V uA V GND RF1 GND GND GND GND GND GND 1 2 24 23 GND RF2 GND GND GND GND GND GND RF Input Power1 (VSWR ≤ 8:1) RF Input Power (VSWR ≤ 8:1) 2 3 4 5 6 7 8 22 VDD Power Supply Voltage IDD Power Supply Current Control Voltage High 3.2 1.4 3.3 90 3.4 170 Exposed Ground Paddle 21 20 19 18 17 Control Voltage Low Operating temperature range (Case) Tj Operating junction temperature Notes: 1. Supply biased 2. Supply unbiased -40 0.4 85 140 V °C °C 10 11 12 13 14 15 VDD GND GND GND GND N/C CTRL N/C 16 9 Table 2. Pin Descriptions Pin No. Pin Name Description Ground RF1 port Ground Ground Ground Ground Ground Ground Ground Ground No Connect Nominal 3.3 V supply connection Control Ground Ground Do Not Connect Ground Ground Ground Ground Ground Ground RF2 port. Ground Ground Ground Ground Common RF port for switch Ground Ground Ground Ground Exposed ground paddle 1 GND 2 RF1 3 GND 4 GND 5 GND 6 GND 7 GND 8 GND 9 GND 10 GND 11 N/C 12 VDD 13 CTRL 14 GND www.DataSheet4U.com 15 GND 16 N/C 17 GND 18 GND 19 GND 20 GND 21 GND 22 GND 23 RF2 24 GND 25 GND 26 GND 27 GND 28 RFC 29 GND 30 GND 31 GND 32 GND paddle GND Table 4. Absolute Maximum Ratings Symbol VDD VI TST Parameter/Conditions Power supply voltage Voltage on any DC input Storage temperature range Maximum case temperature Peak maximum junction temperature (10 seconds max) RF Input power (VSWR 20:1, 10 seconds) RF Input Power (50Ω) RF Input Power, unbiased (VSWR 20:1) Maximum Power Dissipation due to RF Insertion Loss ESD Voltage (HBM, MIL_STD 883 Method 3015.7) Min Max Units -0.3 -0.3 -65 4 VDD+ 0.3 150 85 200 40 45 27 2.2 2000 V V °C °C °C dBm dBm dBm W V TCASE Tj PIN PD VESD Absolute Maximum Ratings Exceeding absolute maximum ratings may cause permanent damage. Operation should be restr...

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