Maker : Philips Semiconductors
Part No. : PESD16VX1UL

Datasheet PDF : PESD16VX1UL.pdf
Cross Reference : PESD16VX1UL Cross Reference
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Product Information

PESD16VX1UL Rev. 01 — 16 December 2009 www.DataSheet4U.com Ultra low capacitance unidirectional ESD protection diode Product data sheet 1. Product profile 1.1 General description Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients. The combination of extremely low capacitance, high ESD maximum rating and ultra small package makes the device ideal for high-speed data line protection and antenna protection applications. 1.2 Features Unidirectional ESD protection of one line Ultra low diode capacitance: Cd = 0.83 pF Low ESD clamping voltage: 40 V at 30 ns and ±8 kV Very low leakage current: IRM < 10 nA ESD protection up to 8 kV IEC 61000-4-2; level 4 (ESD) AEC-Q101 qualified 1.3 Applications 10/100/1000 Mbit/s Ethernet FireWire High-speed data lines Subscriber Identity Module (SIM) card protection Cellular handsets and accessories Portable electronics Communication systems Computers and peripherals Audio and video equipment Antenna protection 1.4 Quick reference data Table 1. Symbol VRWM Cd Quick reference data Parameter reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V Conditions Min Typ 0.83 Max 16 0.98 Unit V pF NXP Semiconductors www.DataSheet4U.com PESD16VX1UL Ultra low capacitance unidirectional ESD protection diode 2. Pinning information Table 2. Pin 1 2 Pinning Description cathode anode [1] Simplified outline Graphic symbol 1 2 1 2 006aaa152 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Package Name PESD16VX1UL Description leadless ultra small plastic package; 2 terminals; body 1.0 × 0.6 × 0.5 mm Version SOD882 Type number 4. Marking Table 4. Marking codes Marking code Z1 Type number PESD16VX1UL 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IPP Tj Tamb Tstg [1] [2] Parameter peak pulse current junction temperature ambient temperature storage temperature Conditions tp = 8/20 μs [1][2] Min −40 −55 Max 0.9 85 +85 +125 Unit A °C °C °C Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 to 2. PESD16VX1UL_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 16 December 2009 2 of 10 NXP Semiconductors www.DataSheet4U.com PESD16VX1UL Ultra low capacitance unidirectional ESD protection diode Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) MIL-STD-883 (human body model) [1] [2] Device stressed with ten non-repetitive ESD pulses. Measured from pin 1 to 2. [1][2] Min - Max 8 10 Unit kV kV Table 7. Standard ESD standards compliance Conditions > 8 kV (contact) > 4 kV IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model) 001aaa631 120 IPP (%) 80 100 % IPP; 8 μs 001aaa630 IPP 100 % 90 % e−t 50 % IPP; 20 μs 40 10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (μs) 40 30 ns 60 ns t 0 Fig 1. 8/20 μs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESD16VX1UL_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 16 December 2009 3 of 10 NXP Semiconductors www.DataSheet4U.com PESD16VX1UL Ultra low capacitance unidirectional ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM IRM VBR Cd VCL rdyn [1] [2] [3] Conditions Min 17.5 [1][2] [3] Typ 10 22 0.83 34 2.4 Max 16 100 30 0.98 - Unit V nA V pF V Ω reverse standoff voltage reverse leakage current VRWM = 16 V breakdown voltage diode capacitance clamping voltage dynamic resistance IR = 10 mA f = 1 MHz; VR = 0 V IPP = 0....

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