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GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB)Maker : Siemens Semiconductor Group
Shortcut : Q-62702-G66 |
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Product Information |
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CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communication Typical Gain Control range over 50dB Positive Control Voltage 50Ω input and output matched Low power consumption Operating voltage range: 2.7 to 6 V Frequency range 800 MHz ... 2.5 GHz 3 2 1 Vd2; RF-out RF-GND Vd1 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package1) CGY 121 A Y9S Q-62702-G66 MW-6 Maximum ratings Characteristics Drain voltage Neg. supply voltage Pos. control voltage Channel temperature Storage temperature range Total power dissipation (TS < 81°C) 2) Thermal resistance Characteristics Channel-soldering point (GND) 1) 2) Symbol max. Value 8 -8 4 150 -55...+150 550 Unit V V V °C °C mW VD VG Vcon TCh Tstg Ptot Symbol max. Value 125 Unit K/W RthChS Dimensions see page 9. Please care for sufficient heat dissipation on the pcb! *) Pin-out changed compared to CGY120: 180° rotation Siemens Aktiengesellschaft 1 Semiconductor Group 1 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Functional block diagram: VD1 (3) VD2 (1) Pin / -VG(4) Pout (1) Vcon (6) Control Circuit GND (2, 5) Pin # 1 2 3 4 5 6 Name VD2 / Pout RF-Gnd VD1 VG / Pin RF-Gnd Configuration Drain voltage 2nd stage / RF-0utput Drain voltage 1st stage Negative voltage at current control circuit (-4V) / RF-Input Vcontrol Positive voltage for gain control (0V....3V) Siemens Aktiengesellschaft 2 Semiconductor Group 2 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Electrical characteristics (TA = 25°C, f = 900 MHz, Vg = -4V, RS = RL = 50 Ω unless otherwise specified) Characteristics Power Gain Vd=3V; I=45mA; Vcon=3V Input return loss Vd=3V; I=45mA; Vcon=3V Output return loss Vd=3V; I=45mA; Vcon=3V Gain Control Range Vcon=3 V ... 0V; Vd=3V; I=45mA 1dB gain compression Vd=3V; I=45mA; Vcon=3V Symbol min 17 48 typ 19 11 10 53 14 max Unit dB dB dB dB dBm G RLin RLout dG P1dB Electrical characteristics (TA = 25°C ,f = 1800 MHz, Vg=-4V, RS = RL = 50 Ω unless otherwise specified) Characteristics Power Gain Vd=3V; I=45mA; Vcon=3V Input return loss Vd=3V; I=45mA; Vcon=3V Output return loss Vd=3V; I=45mA; Vcon=3V Gain Control Range Vcon=3 V ... 0V; Vd=3V; I=45mA 1dB gain compression Vd=3V; I=45mA; Vcon=3V DC characteristics Characteristics Gate current (Pin 4) Vg=-4V Control current (Pin 6) Vg=-4V; Vcon=0V...3V Supply current Vg = -4V; Vcon = 3V Siemens Aktiengesellschaft Symbol min 15.5 48 - typ 17.5 10 8.5 53 14 max - Unit dB dB dB dB dBm G RLin RLout dG P1dB Symbol Ig Ic Id min - typ 1.0 0.5 45 max - Unit mA mA mA 3 Semiconductor Group 3 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Application Circuit f = 900 MHz Vd C3 R2 R3 C4 L1 3 L2 Output 1 Input 50 Ohm C1 R1 4 CGY121 6 2,5 C2 50 Ohm C5 Vg GND Vcontrol C1 R1 CGY 121 C3 L1 R2 C5 L2 R3 C4 C2 Siemens Aktiengesellschaft 4 Semiconductor Group 4 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Parts List Frequency C1, C2 (Siemens Size 0603) C3, C4 (Siemens Size 0603) C5 (Siemens Size 0603) L1 (Coilcraft 0805CS-150XKBC) L2 (Coilcraft 0805CS-270XMBC) R1 (Siemens B 54102-A1271-J60) R2 (Siemens B 54102-A1120-J60) R3 900 MHz 22 pF 100 nF 47 nF 15 nH 27 nH 270 Ohm 12 Ohm 6.8 Ohm 0603 0603 0603 0805 0805 0805 0805 0805 Application Circuit f = 1900 MHz Vd C3 C6 3 R2 R3 C4 L1 Output 1 6 2,5 Input 50 Ohm C1 R1 4 CGY121 C2 50 Ohm C5 Vg GND Vcontrol Siemens Aktiengesellschaft 5 Semiconductor Group 5 23.06.98 HL HF PE GaAs1 1998-11-01 CGY 121 A Parts List Frequency C1, C2 (Siemens size 0603) C3, C4 (Siemens size 0603) C5 (Siemens size 0603) C6 (Siemens size 0603) L1 (Coilcraft 0805CS-150XKBC) R1 (Siemens B 54102-A1271-J60) R2 (Siemens B 54102-A1120-J60) R3 1900 MHz 12 pF 100 nF 47 nF 1.2 pF 15 nH 270 Ohm 12 Ohm 2.7 Ohm 0603 0603 0603 0603 0805 0805 0805 0805 Siemens Aktiengesellschaft 6 Semiconductor Group 6... |
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