Maker : STMicroelectronics
Part No. : Q1NC45R-AP

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www.datasheet4u.com STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH™ Power MOSFET General features Type STD2NC45-1 STQ1NC45R-AP ■ ■ ■ ■ VDSS 450V 450V RDS(on) <4.5Ω <4.5Ω ID 1.5A 0.5A Pw 30W 3.1W 3 2 1 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark IPAK TO-92 (ammopak) Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application – Switch mode low power supplies (SMPS) – Low power, low cost CFL (compact fluorescent lamps) – Low power battery chargers Order codes Part number STD2NC45-1 STQ1NC45R-AP Marking D2NC45 Q1NC45R Package IPAK TO-92 Packaging Tube Ammopak July 2006 Rev 3 1/15 www.st.com 15 www.datasheet4u.com Contents STD2NC45-1 - STQ1NC45R-AP Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 www.datasheet4u.com STD2NC45-1 - STQ1NC45R-AP Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Value Parameter IPAK Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 1.5 0.95 6 30 0.24 3 –65 to 150 Max. operating junction temperature °C 450 ±30 0.5 0.315 2 3.1 0.025 TO-92 V V A A A W W/°C V/ns °C Unit PTOT (2) dv/dt Peak diode recovery voltage slope Storage temperature Tstg Tj 1. Pulse width limited by safe operating area 2. ISD < 0.5A, di/dt < 100 A/µs, VDD =80% V(BR)DSS Table 2. Symbol Rthj-case Rthj-amb Rthj-lead Tl Thermal data Value Parameter IPAK Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-lead max Maximum lead temperature for soldering purpose 4.1 100 -275 TO-92 -120 40 260 °C/W °C/W °C/W °C Unit Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD=50V) Value 1.5 25 Unit A mJ 3/15 www.datasheet4u.com Electrical characteristics STD2NC45-1 - STQ1NC45R-AP 2 Electrical characteristics (TCASE = 25°C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 250µA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125°C VGS = ± 30V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.5A 2.3 3 4.1 Min. 450 1 50 ±100 3.7 4.5 Typ. Max. Unit V µA µA nA V Ω Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test condictions VDS > ID(on) x RDS(on)max, ID = 0.5A Min. Typ. 1.1 160 27.5 4.7 7 1.3 3.2 Max. Unit S pF pF pF nC nC nC VDS = 25V, f = 1 MHz, VGS = 0 VD...

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