Maker : Teccor Electronics
Part No. : Q4008LTH

  Datasheet PDF : Q4008LTH.pdf
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Product Information

U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Quadrac devices are triacs that include a diac trigger mounted inside the same package. This device, developed by Teccor, saves the user the expense and assembly time of buying a discrete diac and assembling in conjunction with a gated triac. Also, the alternistor Quadrac device (QxxxxLTH) eliminates the need for a snubber network. The Quadrac device is a bidirectional AC switch and is gate controlled for either polarity of main terminal voltage. Its primary purpose is for AC switching and phase control applications such as speed controls, temperature modulation controls, and lighting controls where noise immunity is required. Triac current capacities range from 4 A to 15 A with voltage ranges from 200 V to 600 V. Quadrac devices are available in the TO-220 package. The TO-220 package is electrically isolated to 2500 V rms from the leads to mounting surface. 4000 V rms is available on special order. This means that no external isolation is required, thus eliminating the need for separate insulators and insulator-mounting steps and saving dollars over “hot tab” devices. All Teccor triac and diac chips have glass-passivated junctions to ensure long-term device reliability and parameter stability. Variations of devices in this data sheet are available for custom design applications. Consult the factory for more information. Features • • • • • Glass-passivated junctions Electrically-isolated package Internal trigger diac High surge capability — up to 200 A High voltage capability — 200 V to 600 V ©2002 Teccor Electronics Thyristor Product Catalog E3 - 1 http://www.teccor.com +1 972-580-7777 Quadrac Data Sheets Part No. IT(RMS) (5) Isolated Trigger Diac Specifications (T–MT1) VDRM (1) IDRM (1) (10) VTM (1) (3) DVBO (7) VBO (6) [DV± ] (6) IBO CT (11) MT1 T MT2 mAmps TO-220 See “Package Dimensions” section for variations. (12) Volts MIN 200 400 600 200 400 600 400 600 200 400 600 400 600 200 400 600 400 600 200 400 600 400 600 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 TC = 25 °C TC = 100 °C MAX 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 TC = 125 °C Volts TC = 25 °C MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 Volts MAX 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Volts MIN 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 33 MAX 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 43 Volts MIN 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 µAmps MAX 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 µFarads MAX 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 4A Q2004LT Q4004LT Q6004LT Q2006LT Q4006LT 6A Q6006LT Q4006LTH Q6006LTH Q2008LT Q4008LT 8A Q6008LT Q4008LTH Q6008LTH Q2010LT Q4010LT 10 A Q6010LT Q4010LTH Q6010LTH Q2015LT Q4015LT 15 A Q6015LT Q4015LTH Q6015LTH Specific Test Conditions [DV±] — Dynamic breakback voltage (forward and reverse) DVBO — Breakover voltage symmetry CT — Trigger firing capacitance di/dt — Maximum rate-of-change of on-state current dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IBO — Peak breakover current IDRM — Peak off-state current gate open; VDRM = maximum rated value IGTM — Peak gate trigger current (10 µs Max) IH — Holding current; gate open IT(RMS) — RMS on-state current, conduction angle of 360° ITSM — Peak o...

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