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GaAs MMICMaker : Mimix Broadband
Shortcut : R100-XP R1001N11A1-xxx R1002xx R1004 R1005250L R1005300L R100XP |
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Product Information |
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www.DataSheet4U.com 30.0-46.0 GHz GaAs MMIC Receiver Features August 2006 - Rev 01-Aug-06 Sub-harmonic Receiver Integrated LNA, LO Doubler/Buffer, Image Reject Mixer +4.0 dBm Input Third Order Intercept (IIP3) +2.0 dBm LO Drive Level 9.0 dB Conversion Gain 3.5 dB Noise Figure 18.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout R1004 Mimix Broadband’s 30.0-46.0 GHz GaAs MMIC receiver has a noise figure of 3.5 dB and 18.0 dB image rejection across the band. This device is a three stage LNA followed by an image reject resistive pHEMT mixer and includes an integrated LO doubler and LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of integrated LO doubler and LO buffer amplifier makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2), (Id3) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 110, 180 mA +0.3 VDC +5 dBm -65 to +165 OC -55 to MTTF Table3 MTTF Table 3 (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Input Return Loss RF (S11) Small Signal Conversion Gain RF/IF (S21) 2 LO Input Drive (PLO) Image Rejection 2 Noise Figure (NF)2 Isolation LO/RF @ LOx1/LOx2 Input Third Order Intercept (IIP3) 1,2 Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Gate Bias Voltage (Vg4,5) Mixer, Doubler Supply Current (Id1,2) (Vd1,2=4.0, Vg=-0.3V Typical) Supply Current (Id3) (Vd3=4.0V,Vg=-0.3V Typical) Units GHz GHz GHz GHz dB dB dBm dBc dB dB dBm VDC VDC VDC mA mA Min. 35.0 30.0 15.5 DC -1.2 -1.2 Typ. 10.0 9.0 +2.0 18.0 3.5 +4.0 +4.0 -0.3 -0.5 50 145 40.0/40.0 Max. 46.0 46.0 25.0 4.0 +5.5 +0.1 +0.1 100 165 (1) Measured using constant current. (2) Measured using LO Input drive level of 0.0 and +2.0 dBm. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 7 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. www.DataSheet4U.com 30.0-46.0 GHz GaAs MMIC Receiver August 2006 - Rev 01-Aug-06 R1004 Receiver Measurements XR1004 Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, USB LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 30.0 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 30.0 XR1004 Vd1,2,3=4.0 V, Id1,2=50 mA, Id3=145 mA, LSB LO=+2.0 dBm, IF=2.0 GHz, RF=-20.0 dBm, ~1570 Devices Conversion Gain (dB) 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 Conversion Gain (dB) 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 RF Frequency (GHz) Max Median Mean -3si... |
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