Maker : Sanyo Semicon Device
Part No. : SBT150-06JS

  Datasheet PDF : SBT150-06JS.pdf
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Product Information

Ordering number : ENA1652 SBT150-06JS www.DataSheet4U.com SANYO Semiconductors DATA SHEET SBT150-06JS Applications • Schottky Barrier Diode (Twin Type • Cathode Common) 60V, 15A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Tj=150°C. Low forward voltage (VF max=0.58V). Fast reverse recovery time. Low switching noise. High reliability due to planar structure. Micaless package facitating easy mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, sine wave Tc=90°C 50Hz sine wave, 1 cycle Conditions Ratings 60 66 15 100 --55 to +150 --55 to +150 Unit V V A A °C °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Symbol VR VF IR Conditions IR=2mA, Tj=25°C * IF=6A, Tj=25°C * VR=30V, Tj=25°C * Ratings min 60 0.58 0.2 typ max Unit V V mA Note) * : Value per element Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21710SD TK IM TC-00002263 No. A1652-1/3 SBT150-06JS Continued from preceding page. Parameter Interterminal Capacitance Thermal Resistance C Rth(j-c) Symbol Conditions VR=10V, Tj=25°C * Junction-Case : Smoothed DC min www.DataSheet4U.com Ratings typ 270 4.0 max Unit pF °C / W Note) * : Value per element Package Dimensions unit : mm (typ) 7525-001 10.0 3.5 4.5 2.8 Electrical Connection 1 3 3.2 1 : Anode 2 : Cathode 3 : Anode 2 7.2 Top view 16.0 3.6 1.6 1.2 14.0 0.75 1 2 3 0.7 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS) 2.55 2.55 2.4 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 IF -- VF Represented by max 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 IR -- VR Tj=15 0°C Reverse Current, IR -- mA 25°C Forward Current, IF -- A Tj=1 max 50°C yp °C t 150 125 y °C t p °C t 100 yp 0.5 1.0 1.5 IT08549 0 10 20 30 40 50 60 70 IT08550 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 16 14 12 10 8 6 4 2 0 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 8 7 6 5 4 3 2 1 0 PR(AV) -- VRM (1)R...

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