Maker : Sanyo Semicon Device
Part No. : SBT150-10JS

Datasheet PDF : SBT150-10JS.pdf
Cross Reference : SBT150-10JS Cross Reference
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Shortcut : SBT150-10J  SBT150-10JS 

Product Information

Ordering number : ENA0502 SBT150-10JS www.DataSheet4U.com SANYO Semiconductors DATA SHEET SBT150-10JS Applications • Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 15A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Tj=150°C. Low forward voltage (VF max=0.80V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, Sine wave Tc=43°C 50Hz sine wave, 1 cycle Conditions Ratings 100 105 15 80 --55 to +150 --55 to +150 Unit V V A A °C °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Thermal Resistance Symbol VR VF IR C Rth(j-c) Conditions IR=2mA, Tj=25°C* IF=6A, Tj=25°C* VR=50V, Tj=25°C* VR=10V, Tj=25°C* Junction-Case : Smoothed DC Ratings min 100 0.80 0.2 180 4.0 typ max Unit V V mA pF °C / W Note) * : Value per element Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82506SD MS IM TC-00000106 No. A0502-1/3 SBT150-10JS Package Dimensions unit : mm (typ) 7525-001 10.0 3.5 Electrical Connection www.DataSheet4U.com Anode Anode 3.2 4.5 2.8 7.2 Cathode 16.0 3.6 1.6 1.2 14.0 0.75 1 2 3 0.7 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS) 2.55 2.55 2.4 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 IF -- VF Represented by max 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0 IR -- VR Reverse Current, IR -- mA 0°C Tj=15 25°C Forward Current, IF -- A 15 Tj= max 0°C yp °C t 150 °C t 125 yp yp °C t 100 0.5 1.0 1.5 2.0 2.5 3.0 IT08501 20 40 60 80 100 120 IT08502 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 30 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 180° 360° 20 40 60 80 100 θ 360° PR(AV) -- VRM 25 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave θ 360° (4) (2) (3) (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave VR PR max at Tj=150°C (1) (2) 20 (1) 15 (3) 10 Sine wave 5 180° 0 0 2 4 6 8 10 12 14 360° 16 18 Sine wave VR (4) 120 IT08504 Average Output Current, IO -- A IT08503 Peak Reverse Voltage, VRM -- V No. A0502-2/3 SBT150-10JS 170 150 Tc -- IO Interterminal Capacitance, C -- pF (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave θ 360° 1000 7 5 www.DataSheet4U.com C -- VR f=100kHz Case Temperature, Tc -- °C 130 110 90 70 50 30 10 0 180° 2 4 360° 6 3 2 100 7 5 3 Sine wave (1) 8 10 12 (2) 14 (4) (3) 16 18 20 5 7 1.0 2 3 5 7...

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