Maker : Sanyo Semicon Device
Part No. : SBT150-10Y

Datasheet PDF : SBT150-10Y.pdf
Cross Reference : SBT150-10Y Cross Reference
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Shortcut : SBT150-10J  SBT150-10JS  SBT150-10LS  SBT150-10Y 

Product Information

Ordering number : ENN7795 SBT150-10Y www.DataSheet4U.com SBT150-10Y Applications • Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 15A Rectifier High frequency rectification (switching regulators, converters and choppers). Features • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.80V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Surface mount type device reducing the assembling time and facilitating compact and high-density assembly of SBT150-10Y-applied equipment. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, Sine wave Tc=70°C 50Hz sine wave, 1 cycle Conditions Ratings 100 105 15 80 --55 to +150 --55 to +150 Unit V V A A °C °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Thermal Resistance Symbol VR VF IR C Rth(j-c) Conditions IR=2mA, Tj=25°C* IF=6A, Tj=25°C* VR=50V, Tj=25°C* VR=10V, Tj=25°C* Junction-Case : Smoothed DC Ratings min 100 0.80 0.2 180 3.0 typ max Unit V V mA pF °C / W Note) * : Value per element Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405SD MS IM TB-00001558 No.7795-1/3 SBT150-10Y Package Dimensions unit : mm 7001-001 Anode 10.2 0.2 4.5 1.3 Electrical Connection www.DataSheet4U.com Anode 9.9 1.5MAX Cathode 8.8 1.35 1.4 0 to 0.3 0.4 3.0 1 0.8 2 3 1.2 2.55 2.55 2.7 1 : Anode 2 : Cathode 3 : Anode SANYO : SMP-FD 2.55 2.55 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 IF -- VF Represented by max 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0 IR -- VR Reverse Current, IR -- mA 0°C Tj=15 25°C Forward Current, IF -- A 15 Tj= max 0°C yp °C t 150 °C t 125 yp yp °C t 100 0.5 1.0 1.5 2.0 2.5 3.0 IT08501 20 40 60 80 100 120 IT08502 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 30 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 180° 360° 20 40 60 80 100 θ 360° PR(AV) -- VRM 25 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave θ 360° (4) (2) (3) (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave VR PR max at Tj=150°C (1) (2) 20 (1) 15 (3) 10 Sine wave 5 180° 0 0 2 4 6 8 10 12 14 360° 16 18 Sine wave VR (4) 120 IT08504 Average Output Current, IO -- A IT08503 Peak Reverse Voltage, VRM -- V No.7795-2/3 SBT150-10Y 170 150 Tc -- IO Interterminal Capacitance, C -- pF (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Sine wave 180° 360° 1000 7 5 www.DataSheet4U.com C -- VR f=100kHz Case Temperature, Tc -- °C 130 110 90 70 50 30 10 0 3 2 100 7 5 3 Rectangular wave θ 36...

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