|
Free integrated circuits, diodes, triacs, and other semiconductors Datasheet Search and Download Site
| datasheet.co.kr > datasheet > SBT250-06JS > Rectifier |
|
|
RectifierMaker : Sanyo Semicon Device
Shortcut : SBT250-06J SBT250-06JS |
|
Product Information |
|
www.DataSheet.co.kr Ordering number : ENA0997 SBT250-06JS SANYO Semiconductors DATA SHEET SBT250-06JS Applications • Schottky Barrier Diode (Twin Type · Cathode Common) 60V, 25A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Tj=150°C. Low forward voltage (VF max=0.60V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, Sine wave Tc=73°C 50Hz sine wave, 1 cycle Conditions Ratings 60 66 25 120 --55 to +150 --55 to +150 Unit V V A A °C °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Symbol VR VF IR Conditions IR=3mA, Tj=25°C* IF=10A, Tj=25°C* VR=30V, Tj=25°C* Ratings min 60 0.60 0.3 typ max Unit V V mA Note) * : Value per element Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0507SB TI IM TC-00001055 No. A997-1/3 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SBT250-06JS Continued from preceding page. Parameter Interterminal Capacitance Thermal Resistance Symbol C Rth(j-c) Conditions VR=10V, Tj=25°C* Junction-Case : Smoothed DC Ratings min typ 430 3.5 max Unit pF °C / W Note) * : Value per element Package Dimensions unit : mm (typ) 7525-001 Electrical Connection 1 10.0 3.5 3.2 4.5 2.8 3 1 : Anode 2 : Cathode 3 : Anode Top view 7.2 16.0 2 3.6 1.6 1.2 14.0 0.75 1 2 3 0.7 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML(LS) 2.55 2.55 2.4 7 5 3 2 IF -- VF Represented by max 5 3 2 IR -- VR Tj= C 150° Reverse Current, IR -- mA Forward Current, IF -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.5 C 25° 100 7 5 3 2 10 7 5 3 2 1.0 max 0°C j=15 T p C ty 150° C ty 125° 100 p p y °C t 1.0 1.5 IT08555 0 10 20 30 40 50 60 70 IT08556 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 25 Average Reverse Power Dissip... |
|
Link URL |
| http://www.datasheet.co.kr/datasheet-html/S/B/T/SBT250-06JS_SanyoSemiconDevice.pdf.html |
|
Since 2010 - jixjix@gmail.com -
MOSFET -
TTL -
LINEAR VOLTAGE REGULATOR |