Maker : Sanyo Semicon Device
Part No. : SBT250-10J

Datasheet PDF : SBT250-10J.pdf
Cross Reference : SBT250-10J Cross Reference
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Product Information

Ordering number : ENN7799 SBT250-10J www.DataSheet4U.com SBT250-10J Applications • Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 25A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.80V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, Sine wave Tc=42°C 50Hz sine wave, 1 cycle Conditions Ratings 100 105 25 100 --55 to +150 --55 to +150 Unit V V A A °C °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Thermal Resistance Symbol VR VF IR C Rth(j-c) Conditions IR=3mA, Tj=25°C* IF=9.5A, Tj=25°C* VR=50V, Tj=25°C* VR=10V, Tj=25°C* Junction-Case : Smoothed DC Ratings min 100 0.80 0.3 280 3.4 typ max Unit V V mA pF °C / W Note) * : Value per element Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31505SD TS IM TB-00001226 No.7799-1/3 SBT250-10J Package Dimensions unit : mm 1178A 4.5 2.8 3.5 7.2 7.2 Electrical Connection www.DataSheet4U.com Anode Anode 10.0 3.2 16.0 Cathode 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-220ML 2.55 2.55 100 7 5 3 2 IF -- VF Represented by max Tj=1 50°C 25°C Reverse Current, IR -- mA 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 IR -- VR Forward Current, IF -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.5 1.0 1.5 2.0 2.5 IT09159 5 Tj=1 m 0°C ax °C t 150 yp °C t 125 100 yp typ °C 0 20 40 60 80 100 120 IT09160 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 35 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 20 18 16 14 12 10 θ 8 6 4 2 0 0 20 40 60 80 100 360° PR(AV) -- VRM Rectangular wave 30 θ 25 360° (4) (1) (2) (3) PR max at Tj=150°C (1) Sine wave 20 180° 360° (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave VR (2) (3) 15 10 Sine wave VR 180° 360° 5 0 0 5 10 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 15 20 25 30 IT09193 (4) 120 IT09162 Average Forward Current, IO -- A Peak Reverse Voltage, VRM -- V No.7799-2/3 SBT250-10J 160 140 Tc -- IO Interterminal Capacitance, C -- pF (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Sine wave 180° 360° 2 www.DataSheet4U.com C -- VR f=100kHz Case Temperature, Tc -- °C 1000 7 5 120 100 80 60 40 20 0 0 5 10 3 2 Rectangular wave θ 360° 100 7 5 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ID01096 (1) 15 (2) 20 (4) (3) 25 30 IT09194 Aver...

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